Electron spin resonance observation of the creation, annihilation, and charge state of the 74-Gauss doublet in device oxides damaged by soft x rays

Takahashi, T.; Triplett, B. B.; Yokogawa, K.; Sugano, T.
October 1987
Applied Physics Letters;10/26/1987, Vol. 51 Issue 17, p1334
Academic Journal
The E’ related defect called the 74-Gauss doublet is shown to be produced by reaction of E’ with hydrogen and is positively charged like the E’. The doublet is easily annihilated by exposure to ultraviolet light in contrast to the E’ which is comparatively stable. The new positive defect identified here appears to be the third paramagnetic ‘‘trivalent silicon’’ apparently generally responsible for damage and repair of damage to thermal oxides on silicon.


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