Formation of epitaxial layers of Ge on Si substrates by Ge implantation and oxidation

Fathy, D.; Holland, O. W.; White, C. W.
October 1987
Applied Physics Letters;10/26/1987, Vol. 51 Issue 17, p1337
Academic Journal
Thin epitaxial layers of Ge-Si alloys have been formed on Si(100) substrates by steam oxidation of Ge-implanted samples. During the oxidation, the Ge is totally piled up ahead of the SiO2/Si interface. This segregation of Ge leads to the formation of a distinct, Ge-rich layer which is epitaxial with the underlying Si. The thickness of the Ge layer is dependent on the implantation dose. This layer and its two bounding interfaces with the oxide and Si are characterized as a function of the implantation dose and energy, using Rutherford backscattering and high-resolution transmission electron microscopy.


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