Infrared absorption of epitaxial NiSi2 layers on Si(111)

Flohr, Th.; Schulz, M.; Tung, R. T.
October 1987
Applied Physics Letters;10/26/1987, Vol. 51 Issue 17, p1343
Academic Journal
Infrared absorption of epitaxial type A and type B NiSi2 layers on Si(111) has been measured with photoacoustic spectroscopy. Type A silicides showed identical absorption as type B layers with corresponding thicknesses. The observed dependence of absorption on silicide thickness agrees with calculations based on no-interface absorption, in sharp contrast to previous studies of nonepitaxial silicide interfaces. These results suggest that the densities of electronic states at epitaxial NiSi2 interfaces are below the detection limit of this technique, ∼1014 cm-2.


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