TITLE

Infrared absorption of epitaxial NiSi2 layers on Si(111)

AUTHOR(S)
Flohr, Th.; Schulz, M.; Tung, R. T.
PUB. DATE
October 1987
SOURCE
Applied Physics Letters;10/26/1987, Vol. 51 Issue 17, p1343
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Infrared absorption of epitaxial type A and type B NiSi2 layers on Si(111) has been measured with photoacoustic spectroscopy. Type A silicides showed identical absorption as type B layers with corresponding thicknesses. The observed dependence of absorption on silicide thickness agrees with calculations based on no-interface absorption, in sharp contrast to previous studies of nonepitaxial silicide interfaces. These results suggest that the densities of electronic states at epitaxial NiSi2 interfaces are below the detection limit of this technique, ∼1014 cm-2.
ACCESSION #
9824697

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics