TITLE

Infrared absorption of epitaxial NiSi2 layers on Si(111)

AUTHOR(S)
Flohr, Th.; Schulz, M.; Tung, R. T.
PUB. DATE
October 1987
SOURCE
Applied Physics Letters;10/26/1987, Vol. 51 Issue 17, p1343
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Infrared absorption of epitaxial type A and type B NiSi2 layers on Si(111) has been measured with photoacoustic spectroscopy. Type A silicides showed identical absorption as type B layers with corresponding thicknesses. The observed dependence of absorption on silicide thickness agrees with calculations based on no-interface absorption, in sharp contrast to previous studies of nonepitaxial silicide interfaces. These results suggest that the densities of electronic states at epitaxial NiSi2 interfaces are below the detection limit of this technique, ∼1014 cm-2.
ACCESSION #
9824697

 

Related Articles

  • Dependence of thermal conductivity of porous silicon on porosity characterized by photoacoustic technique. Shen, Qing; Toyoda, Taro // Review of Scientific Instruments;Jan2003, Vol. 74 Issue 1, p601 

    We have applied a photoacoustic (PA) technique to study the thermal properties of porous silicon (PS) films formed on p-type Si substrates by electrochemical anodic etching with greatly different porosities (20%-60%). From the dependence of the PA signals on the modulation frequency of...

  • Energy spectra and dynamics of surface states on silicon investigated by the photoacoustic method. Todorovic, D. M.; Smiljanic, M. // Review of Scientific Instruments;Jan2003, Vol. 74 Issue 1, p747 

    The spectral and dynamic characteristics of surface energy states (SES) on a Si wafer are investigated by photoacoustic (PA) spectroscopy. The PA spectra were measured as a function of the wavelength and modulation frequency of the excitation optical beam by the PA spectrometer. The PA amplitude...

  • Exposure time dependence of the photoacoustic and photoluminescence intensities of porous silicon with different wavelengths of excitation light. Toyoda, Taro; Yamazaki, Takahiro; Shen, Qing // Review of Scientific Instruments;Jan2003, Vol. 74 Issue 1, p869 

    We report the exposure time dependence of the photoacoustic (PA) intensities of porous silicon (PS) with different excitation wavelengths together with that of the photoluminescence (PL). Although the PA intensity decreases somewhat slowly with exposure time, the PL intensity undergoes...

  • Non-contact optoacoustic imaging with focused air-coupled transducers. Deán-Ben, X. Luís; Pang, Genny A.; de Espinosa, Francisco Montero; Razansky, Daniel // Applied Physics Letters;8/3/2015, Vol. 107 Issue 5, p1 

    Non-contact optoacoustic imaging employing raster-scanning of a spherically focused air-coupled ultrasound transducer is showcased herein. Optoacoustic excitation with laser fluence within the maximal permissible human exposure limits in the visible and near-infrared spectra is applied to...

  • Integrate-and-fire infrared detectors. Coon, D. D.; Perera, A. G. U. // Applied Physics Letters;11/23/1987, Vol. 51 Issue 21, p1711 

    The effect of infrared radiation on spontaneous pulsing of forward biased silicon p+-n-n+ diodes (injection mode devices) at 4.2 K is studied as a means of detecting infrared radiation in the wavelength range of 20–32 μm. A model based on space-charge buildup of phosphorus donors in...

  • Silicon-to-silicon direct bonding method. Shimbo, M.; Furukawa, K.; Fukuda, K.; Tanzawa, K. // Journal of Applied Physics;10/15/1986, Vol. 60 Issue 8, p2987 

    Discusses the occurrence of strong bonding when a pair of clean, mirror-polished silicon surfaces are contacted at room temperature after hydrophilic surface formation. Application of thermic infrared rays transmitted through the bonded wafer for imaging voids; Evaluation of electric resistance...

  • Spatially resolved lifetime imaging of silicon wafers by measurement of infrared emission. Schubert, Martin C.; Isenberg, Joerg; Warta, Wilhelm // Journal of Applied Physics;9/15/2003, Vol. 94 Issue 6, p4139 

    Reports on the measurement of infrared absorption of excess carriers which is a successful technique by which images of the excess carrier density and recombination lifetime in silicon can be generated. Development of carrier density imaging as a powerful tool by which one obtains such images;...

  • Terahertz optically pumped Si:Sb laser. Pavlov, S. G.; Hübers, H.-W.; Riemann, H.; Zhukavin, R. Kh.; Orlova, E. E.; Shastin, V. N. // Journal of Applied Physics;11/15/2002, Vol. 92 Issue 10, p5632 

    Far-infrared stimulated emission from optically pumped neutral Sb donors in silicon has been obtained. Lasing with a wavelength o f 58.2 μm from the intracenter 2p[SUB0] → 1 s (T[SUB2] : F[SUB8]) transition has been realized under CO[SUB2] laser pumping at liquid helium temperature....

  • Fracture phenomena in silicon imaged by infrared radiation from ejected small particles. Busch, E.; Haneman, D. // Applied Physics Letters;7/27/1998, Vol. 73 Issue 4 

    We have found that fracture of silicon wafer specimens without introduced flaws takes place with the ejection of many small particles that emit infrared radiation, which has been imaged with a sensitive CCD camera. The particles are of order micron dimensions, preventing surface-barrier...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics