TITLE

New evidence of small lattice relaxation for the DX center in AlxGa1-xAs

AUTHOR(S)
Talwar, D. N.; Manasreh, M. O.; Suh, K. S.; Covington, B. C.
PUB. DATE
October 1987
SOURCE
Applied Physics Letters;10/26/1987, Vol. 51 Issue 17, p1358
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Local structure of isolated Si impurity in GaAs and AlAs is studied using a parameter-free semi-empirical tight binding method. It is predicted that nearest neighbor As atom around the impurity moves toward SiGa(Al) causing a 6.54% (5.73%) change in GaAs(AlAs) bond length. An estimation of lattice distortion energy 0.02±0.003 eV (0.025±0.003 eV) for GaAs:Si (AlAs:Si) is found in good qualitative agreement with the value obtained by J. C. M. Henning and J. P. M. Ansems [Semicond. Sci. Technol. 2, 1 (1987)] from the photoionization of the DX center in lightly doped Si impurities in Al0.33Ga0.67As. The fits for the observed maxima in the optical cross section and the calculation of the pressure-dependent thermal barrier energy lend support for the small lattice relaxation models and cast doubt on the validity of those with the large lattice relaxation usually recommended for this class of centers.
ACCESSION #
9824685

 

Related Articles

  • Fabrication breakthrough holds promise for optoelectronics. Hecht, Jeff // Laser Focus World;Nov2001, Vol. 37 Issue 11, p17 

    Provides information on a technique for the fabrication of gallium arsenide (GaAs) components on a silicon substrate developed by Motorola Laboratories. Lattice spacing in GaAs; Nature of approaches to the fabrication process; Efforts of Motorola in the development of equipment and materials...

  • Investigation of gallium arsenide single crystals with various crystallographic orientations, after implantation of silicon ions and pulsed photon annealing. Vasil’kovskiı, S. V.; Konakova, R. V.; Tkhorik, Yu. A.; Dukhnovskiı, M. P. // Technical Physics;May99, Vol. 44 Issue 5, p548 

    The results of experimental investigations of gallium arsenide single crystals with the orientations (100), (311)A, (211)A, (111)A, and (221)A are presented. The crystals were doped with silicon ions on the Iolla-3M setup (ion energy 75 keV, ion beam density 1 μA/cm[sup 2], implantation dose...

  • Growth of gallium arsenide on hydrogen passivated Si with low-temperature treatment... Fang, S.F.; Salvador, A.; Morkoc, H. // Applied Physics Letters;4/29/1991, Vol. 58 Issue 17, p1887 

    Reports on the growth of gallium arsenide on hydrogen passivated silicon with low-temperature treatment. Monitoring of the silicon surface by reflection high-energy electron diffraction; Effect of T[sub pre] on GaAs grown on the Si substrates.

  • Properties of SiO[sub 2]/Si/GaAs structures formed by solid phase epitaxy of amorphous Si on GaAs. Callegari, A.; Sadana, D.K. // Applied Physics Letters;6/3/1991, Vol. 58 Issue 22, p2540 

    Describes the properties of SiO[sub 2]/Si/GaAs structures formed by solid phase epitaxy of amorphous silicon (Si) on gallium arsenide (GaAs). Achievement of solid phase epitaxy amorphous Si layers on GaAs using in situ plasma processing and subsequent annealing; High-resolution transmission...

  • Si doping efficiency in GaAs grown at low temperatures. Winer, K.; Kawashima, M. // Applied Physics Letters;6/17/1991, Vol. 58 Issue 24, p2818 

    Shows the measurement of the doping efficiency of silicon (Si) as a function of substrate temperature beam equivalent As[sub4]-to-Ga fluence ratio R, and beam supply conditions. Kinetic limitations of low-temperature gallium arsenide (GaAs) homoepitaxy; Decrease in the doping efficiency;...

  • Growth of stress-released GaAs on GaAs/Si structure by metalorganic chemical vapor deposition. Soga, T.; Jimbo, T.; Arokiaraj, J.; Umeno, M. // Applied Physics Letters;12/11/2000, Vol. 77 Issue 24 

    A stress-released GaAs layer was grown on GaAs bonded to Si substrate with the combination of epitaxial lift-off technique and regrowth by metalorganic chemical vapor deposition. The GaAs thin film was bonded to Si substrate using SeS[sub 2] and another GaAs layer was regrown. The...

  • Effects of substrate temperatures on the doping profiles of Si in selectively doped AlGaAs/GaAs/AlGaAs double-heterojunction structures. Inoue, Kaoru; Sakaki, Hiroyuki; Yoshino, Junji; Yoshioka, Yoshiaki // Applied Physics Letters;5/15/1985, Vol. 46 Issue 10, p973 

    Electrical properties of selectively doped double heterojunctions with a thin GaAs layer (≤300 Å) grown by molecular beam epitaxy are known to depend significantly on the substrate temperatures during growth. Although samples grown at 530 °C show high electron mobilities and...

  • Optically pumped tunable mode-locked Si-doped GaAs laser. Valk, B.; Call, T. S.; Salour, M. M.; Kopp, W.; Morkoç, H. // Applied Physics Letters;7/21/1986, Vol. 49 Issue 3, p119 

    Mode-locked operation of Si-doped bulk GaAs in external cavity was achieved by synchronous pumping with a Kr+ laser at 647.1 nm. High beam quality and peak powers of up to 3.3 W are unique features of this laser. The spontaneous spectrum is narrower than those of dyes, allowing a stabilized...

  • Critical resolved shear stress measurements for silicon-doped GaAs single crystals. Bourret, E. D.; Tabache, M. G.; Elliot, A. G. // Applied Physics Letters;5/11/1987, Vol. 50 Issue 19, p1373 

    The critical resolved shear stress of GaAs single crystals doped with silicon was directly measured using dynamical compression tests at high temperatures. At the melting point the critical resolved shear stress is 0.032 and 0.027 kg/mm2 for crystals doped with 1.5×1018 and 3×1018 cm-3...

  • Effect of As overpressure during annealing on the nonuniformity of activation efficiency in Si-implanted GaAs layer. Sato, Takashi; Tajima, Michio; Ishida, Koichi // Applied Physics Letters;9/7/1987, Vol. 51 Issue 10, p755 

    The effects of As overpressure during annealing on nonuniformity, i.e., the variations of sheet carrier concentration and Hall mobility across wafers, have been studied for Si-implanted undoped semi-insulating GaAs. The nonuniformity was found to be suppressed by annealing under high As...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics