Residual defect center in GaInAs/InP films grown by molecular beam epitaxy

Loualiche, S.; Gauneau, A.; Le Corre, A.; Lecrosnier, D.; L’Haridon, H.
October 1987
Applied Physics Letters;10/26/1987, Vol. 51 Issue 17, p1361
Academic Journal
Schottky contact with apparent barrier height of near 0.65 eV has been fabricated and used to perform capacitance-voltage and deep level transient spectroscopy characterizations on n-type molecular beam epitaxy grown GaInAs layers matched to InP substrates. The experimental results show the existence of a residual defect center located at 0.33 eV below the conduction band which is here described for the first time. This defect center is localized close to the surface and the interface of the grown layers. The origin of the center is not clearly understood, but it seems to be a residual defect in which oxygen atom can be involved.


Related Articles

  • Al/Si/AlGaAs/GaAs Schottky barriers by molecular beam epitaxy. Miller, T.J.; Nathan, M.I. // Applied Physics Letters;11/9/1992, Vol. 61 Issue 19, p2332 

    Examines the growth of aluminum/silicon/aluminum gallium arsenide/gallium arsenide Schottky diode structures by molecular beam epitaxy. Determination of barrier height behavior as a function of aluminum mole fraction; Fabrication of aluminum dots on the surface; Effect of the conduction band...

  • Time response analysis of ZnSe-based Schottky barrier photodetectors. Monroy, E.; Vigué, F.; Calle, F.; Izpura, J. I.; Mun˜oz, E.; Faurie, J.-P. // Applied Physics Letters;10/23/2000, Vol. 77 Issue 17 

    We report on the characterization of ZnSe- and ZnMgBeSe-based Schottky barrier photodetectors grown on semi-insulating GaAs(001) by molecular-beam epitaxy. The spectral response of the devices shows a very sharp cutoff at variable wavelength, determined by the alloy composition, with a large...

  • On the Richardson constant for aluminum/gallium arsenide Schottky diodes. Missous, M.; Rhoderick, E. H. // Journal of Applied Physics;5/15/1991, Vol. 69 Issue 10, p7142 

    Presents a study which measured the Richardson constant for aluminum/gallium arsenide Schottky diodes in which the aluminum is deposited epitaxially by molecular beam epitaxy. Experimental details; Temperature variation for the barrier height; Discussion and conclusions.

  • High-frequency operation of heavily carbon-doped Ga[sub 0.51]In[sub 0.49]P/GaAs surface-emitting.... de Lyon, T.J.; Woodall, J.M.; McInturff, D.T.; Kirchner, P.D.; Kash, J.A.; Bates, R.J.S.; Hodgson, R.T.; Cardone, F. // Applied Physics Letters;7/22/1991, Vol. 59 Issue 4, p402 

    Examines heavily carbon-doped gallium indium phosphide/gallium arsenide (GaAs) high-frequency operation grown by metalorganic molecular beam epitaxy. Utilization of trimethylgallium in doping GaAs active layer; Reduction of radiative lifetime in GaAs; Determination of transient optical response.

  • Molecular beam epitaxial growth and low-temperature optical characterization of GaAs0.5Sb0.5 on InP. Klem, J.; Huang, D.; Morkoç, H.; Ihm, Y. E.; Otsuka, N. // Applied Physics Letters;5/11/1987, Vol. 50 Issue 19, p1364 

    GaAs1-xSbx nearly lattice matched to InP substrates has been grown by molecular beam epitaxy. For a given As and Sb flux, the GaSb mole fraction is shown to be sensitive to the Ga flux rate. Low-temperature photoluminescence spectra exhibit a dominant emission line at 0.780–0.790 eV with...

  • Optical properties of InGaAs lattice-matched to InP. Nee, T. W.; Green, A. K. // Journal of Applied Physics;11/15/1990, Vol. 68 Issue 10, p5314 

    Discusses a study which measured the optical spectra of a molecular-beam-epitaxially grown indium gallium arsenide epilayer lattice-matched on a (100) indium phosphide substrate in the visible and infrared regions. Experimental details; Spectroscopic analysis and results; Conclusion.

  • Correlation between current-voltage and capacitance-voltage Schottky barrier height on (100) and (110) GaAs and (110) InP surfaces. Chin, Vincent W. L.; Green, Martin A.; Storey, John W. V. // Journal of Applied Physics;10/1/1990, Vol. 68 Issue 7, p3470 

    Discusses systematic studies of the electrical properties of both n- and p-type Schottky diodes formed by metals on gallium arsenide of both (100) and (110) orientation and on (100)-oriented indium phosphide. Method of analysis; Data on the physical constants and parameters used in the...

  • Pseudomorphic GaInP Schottky diode and high electron mobility transistor on InP. Loualiche, S.; Ginudi, A.; Le Corre, A.; Lecrosnier, D.; Vaudry, C.; Henry, L.; Guillemot, C. // Applied Physics Letters;11/13/1989, Vol. 55 Issue 20, p2099 

    GaInP material has been used as a high-gap semiconductor on InP to fabricate Schottky diodes. The experimental results show that the devices exhibit good electrical properties when the ternary strained layer is below the critical thickness. The best device is obtained with a gallium composition...

  • Long-wavelength (1.0–1.6 μm)In0.52Al0.48As/ In0.53(GaxAl1-x)0.47As/In0.53Ga0.47As metal-semiconductor-metal photodetector. Griem, H. T.; Ray, S.; Freeman, J. L.; West, D. L. // Applied Physics Letters;3/12/1990, Vol. 56 Issue 11, p1067 

    We have fabricated a metal-semiconductor-metal Schottky photodetector on a semi-insulating InP substrate using a nominally lattice-matched In0.52Al0.48As/In0.53(GaxAl1-x)0.47As (graded)/In0.53Ga0.47As structure grown by molecular beam epitaxy. On average the graded quaternary layer enhanced the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics