Defects in (111) HgTe grown by molecular beam epitaxy

Feldman, R. D.; Nakahara, S.; Austin, R. F.; Boone, T.; Opila, R. L.; Wynn, A. S.
October 1987
Applied Physics Letters;10/19/1987, Vol. 51 Issue 16, p1239
Academic Journal
Room-temperature Hall mobilities of (100) HgTe films grown by molecular beam epitaxy can reach values of 27 000–31 000 cm2 V-1 s-1, while the mobilities of (111) films are only 14 000–16 000 cm2 V-1 s-1. We show that the defects which lead to the lower mobilities of (111) films are present in the first 1000 Å of growth. Transmission electron microscope studies reveal a cellular structure of high-angle grain boundaries with some twinning about the (111) growth axis. These defects, and hence the reduced mobilities of the films, appear to result from island nucleation of the films.


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