TITLE

Defects in (111) HgTe grown by molecular beam epitaxy

AUTHOR(S)
Feldman, R. D.; Nakahara, S.; Austin, R. F.; Boone, T.; Opila, R. L.; Wynn, A. S.
PUB. DATE
October 1987
SOURCE
Applied Physics Letters;10/19/1987, Vol. 51 Issue 16, p1239
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Room-temperature Hall mobilities of (100) HgTe films grown by molecular beam epitaxy can reach values of 27 000–31 000 cm2 V-1 s-1, while the mobilities of (111) films are only 14 000–16 000 cm2 V-1 s-1. We show that the defects which lead to the lower mobilities of (111) films are present in the first 1000 Å of growth. Transmission electron microscope studies reveal a cellular structure of high-angle grain boundaries with some twinning about the (111) growth axis. These defects, and hence the reduced mobilities of the films, appear to result from island nucleation of the films.
ACCESSION #
9824596

 

Related Articles

  • Setback modulation doping of HgTe-CdTe multiple quantum wells. Hoffman, C.A.; Meyer, J.R. // Applied Physics Letters;5/4/1992, Vol. 60 Issue 18, p2282 

    Examines the setback modulation of doping of mercury telluride-cadmium telluride heterostructures using photoassisted molecular beam epitaxy. Influence of setback on electron mobility; Enhancement of the electron mobility; Combination of the quantum Hall effect measurements with the mixed...

  • Effect of orientation of the substrate on the conditions of growth of HgTe films by molecular beam epitaxy. Yakushev, M.; Babenko, A.; Sidorov, Yu. // Inorganic Materials;Jan2009, Vol. 45 Issue 1, p13 

    The kinetics of growth of HgTe films under conditions of molecular beam epitaxy on the (310)- and (100)-oriented CdTe buffer layers is studied by ellipsometry. It is established that the minimum pressure of Hg vapors required for growth of HgTe films on the (310) surface is four times lower than...

  • Infrared properties and band gaps of HgTe/CdTe superlattices. Jones, C. E.; Casselman, T. N.; Faurie, J. P.; Perkowitz, S.; Schulman, J. N. // Applied Physics Letters;7/15/1985, Vol. 47 Issue 2, p140 

    Measurement of the optical transmission spectra of four HgTe/CdTe superlattices grown by molecular beam epitaxy has been carried out at 300 and 30 K to determine the absorption coefficients, refractive indexes, and band-gap energies. In ail cases the optical absorption coefficients reached high...

  • Growth and properties of dilute magnetic semiconductor superlattices containing Hg1-xMnxTe. Harris, K. A.; Hwang, S.; Lansari, Y.; Cook, J. W.; Schetzina, J. F. // Applied Physics Letters;9/22/1986, Vol. 49 Issue 12, p713 

    We report details of the successful growth by molecular beam epitaxy of superlattices containing alternating layers of Hg1-xMnxTe and HgTe. These structures are the first superlattices containing layers of a mercury-based dilute magnetic semiconductor (Hg1-xMnxTe ) to be grown by any thin-film...

  • Two-dimensional behavior of molecular beam epitaxy grown HgTe. Justice, R. J.; Seiler, D. G.; Zawadzki, W.; Koestner, R. J.; Goodwin, M. W. // Applied Physics Letters;4/18/1988, Vol. 52 Issue 16, p1332 

    Two-dimensional electronic properties of HgTe films (∼2 μm thick) grown by molecular beam epitaxy on CdTe substrates have been investigated by using the Shubnikov–de Haas effect. Electron densities, effective masses, and Dingle temperatures of three electric subbands in an...

  • Electron Transport Mechanism in GaN/AlGaN HEMT Structures. Gokden, Sibel // Turkish Journal of Physics;2003, Vol. 27 Issue 3, p205 

    Presents a study which investigated the electron transport mechanism in gallium nitride (GaN)/AlGaN High Electron Mobility Transistors structures grown with molecular beam epitaxy on sapphire substrate using the temperature dependence of the Hall coefficient, resistivity, carrier density and...

  • Tubular wells, levitating arrays and more...  // Nature Materials;Aug2008, Vol. 7 Issue 8, p608 

    The article focuses on the use of molecular beam epitaxy (MBE) to grow semiconductor structures. A number of fundamental phenomena, such as the integer and fractional quantum Hall effects, were studied by depositing thin layers of materials on a substrate with few imperfections and high carrier...

  • Compositional variation of nearly lattice-matched InAlGaN alloys for high electron mobility transistors. Lim, T.; Aidam, R.; Kirste, L.; Waltereit, P.; Quay, R.; Müller, S.; Ambacher, O. // Applied Physics Letters;6/21/2010, Vol. 96 Issue 25, p252108 

    Quaternary InAlGaN semiconductors with AlN mole fractions between 40% and 81% and respective InN contents of 7% and 19% including InAlN as a ternary border case have been grown by plasma-assisted molecular beam epitaxy. The electron mobility in InAlGaN-based heterostructures increases with Ga...

  • AlGaAs/InGaAs/AlGaAs double pulse doped pseudomorphic high electron mobility transistor... Hoke, W.E.; Lyman, P.S.; Mosca, J. J.; McTaggart, R. A.; Lemonias, P. J.; Beaudoin, R. M.; Torabi, A.; Bonner, W. A.; Lent, B.; Chou, L.-J.; Hsieh, K. C. // Journal of Applied Physics;10/1/1997, Vol. 82 Issue 7, p3576 

    Reports on the growing of double pulse doped AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor on InGaAs substrates using molecular beam epitaxy. Use of strain compensated, AlGaInAs/GaAs superlattice for improved resistivity and breakdown; Obtaining of electrical and optical...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics