New hydride vapor phase epitaxy for GaP growth on Si

Mori, H.; Ogasawara, M.; Yamamoto, M.; Tachikawa, M.
October 1987
Applied Physics Letters;10/19/1987, Vol. 51 Issue 16, p1245
Academic Journal
Gallium phosphide films are successfully grown on (100) Si substrates by a new hydride vapor phase epitaxy. Mixing of reactant vapors just above the substrate makes the growth rate as high as 50 nm/min even in the temperature range of 350–450 °C. This makes the two-step growth procedure applicable for growing a single domain GaP film on Si from H2-HCl-PH3-Ga reactants. An etch pit density of 7.5×106 cm-2 and a full width at half-maximum of 93 arcsec in a double-crystal x-ray rocking curve are achieved. Green light-emitting diodes with 565 nm peak wavelength are successfully fabricated using nitrogen-doped GaP films grown on Si.


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