TITLE

Enhanced ballistic transport in InGaAs/InAlAs hot-electron transistors

AUTHOR(S)
Chen, J.; Reddy, U. K.; Mui, D.; Peng, C. K.; Morkoç, H.
PUB. DATE
October 1987
SOURCE
Applied Physics Letters;10/19/1987, Vol. 51 Issue 16, p1254
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Hot-electron transistors fabricated using a 600-Å InGaAs base and a 500-Å InAlAs barrier have shown a peak ballistic common base current gain of 0.82 at 77 K despite the large injection energies. Reduction of injection energies by lowering the emitter and collector barriers should lead to an even higher ballistic transport ratio due to the reduced Γ-L scattering.
ACCESSION #
9824577

 

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