Enhanced ballistic transport in InGaAs/InAlAs hot-electron transistors

Chen, J.; Reddy, U. K.; Mui, D.; Peng, C. K.; Morkoç, H.
October 1987
Applied Physics Letters;10/19/1987, Vol. 51 Issue 16, p1254
Academic Journal
Hot-electron transistors fabricated using a 600-Å InGaAs base and a 500-Å InAlAs barrier have shown a peak ballistic common base current gain of 0.82 at 77 K despite the large injection energies. Reduction of injection energies by lowering the emitter and collector barriers should lead to an even higher ballistic transport ratio due to the reduced Γ-L scattering.


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