TITLE

Thermal conversion of AlxGa1-xAs layers grown by molecular beam epitaxy

AUTHOR(S)
Adachi, Sadao; Yamahata, Shoji
PUB. DATE
October 1987
SOURCE
Applied Physics Letters;10/19/1987, Vol. 51 Issue 16, p1265
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report the observation of thermal conversion of AlxGa1-xAs alloys grown by molecular beam epitaxy (MBE) from undoped, high-resistivity AlxGa1-xAs to low-resistivity, p-type material after annealing beyond the growth temperature (∼650 °C). The phenomenon occurs only in the Al-containing layers and not in the GaAs. Electrical measurements indicate that a substantial concentration of residual C acceptors causes the thermal conversion of the AlxGa1-xAs layers. A possible mechanism of C incorporation during MBE is examined from a thermodynamical point of view.
ACCESSION #
9824566

 

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