Stability of 300 K continuous operation of p-n AlxGa1-xAs-GaAs quantum well lasers grown on Si

Deppe, D. G.; Nam, D. W.; Holonyak, N.; Hsieh, K. C.; Matyi, R. J.; Shichijo, H.; Epler, J. E.; Chung, H. F.
October 1987
Applied Physics Letters;10/19/1987, Vol. 51 Issue 16, p1271
Academic Journal
Data are presented on p-n (diode) AlxGa1-xAs-GaAs quantum well lasers grown on Si indicating that continuous 300 K operation is possible for four or more hours. Lower threshold diodes (1.4 kA/cm2) of given dislocation density are not necessarily as stable as higher threshold diodes (1.8 kA/cm2) of lower dislocation density, ∼10 min vs >=4 h. Stability data on diodes agree with the behavior of photopumped samples of the same crystals with the Si substrates removed.


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