TITLE

Excimer laser in situ treatment of GaAs surfaces: Electrical properties of tungsten/GaAs diodes

AUTHOR(S)
Maki, P. A.; Ehrlich, D. J.
PUB. DATE
October 1987
SOURCE
Applied Physics Letters;10/19/1987, Vol. 51 Issue 16, p1274
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The effects of low-power irradiation of an n-type GaAs surface by a 193-nm excimer laser during tungsten metallization have been examined. Schottky diode characteristics of surfaces held under ultrahigh vacuum (10-9 Torr) conditions and in oxygen and chlorine ambients of 10-6 Torr show significant shifts in effective barrier height due to irradiation and depending on the ambient. The results of the electrical measurements are interpreted in terms of the possible laser surface chemistry. The applications for in situ surface cleaning for device processing within a vacuum GaAs growth chamber and applications for laser photochemical etching and oxidation of GaAs are discussed.
ACCESSION #
9824553

 

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