Model calculation on the Meyer–Neldel rule for the field-effect conductance of hydrogenated amorphous silicon

Yoon, Byung-Gook; Lee, Choochon
October 1987
Applied Physics Letters;10/19/1987, Vol. 51 Issue 16, p1248
Academic Journal
A model calculation was carried out to study the Meyer–Neldel rule of the field-effect conductance of hydrogenated amorphous silicon (a-Si:H). It was found that the shift of Fermi level and the potential profile in the sample with temperature can explain the Meyer–Neldel rule if a model density of states of a-Si:H is properly chosen. So it is of doubt to think that the conductivity prefactor varies in a single sample of band-bending case, as assumed by some authors.


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