TITLE

Growth of α-Al2O3 films by molecular layer epitaxy

AUTHOR(S)
Oya, Gin-ichiro; Yoshida, Munehiro; Sawada, Yasuji
PUB. DATE
October 1987
SOURCE
Applied Physics Letters;10/12/1987, Vol. 51 Issue 15, p1143
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Single-crystal α-Al2O3 films are, for the first time, successfully grown on sapphire wafers above ∼600 °C by the molecular layer epitaxy (MLE) method using AlCl3 vapor and a He 15%O2 gas mixture. The average growth rate observed barely depends on the substrate temperature, being ∼0.09 nm per cycle of gas transport, under the used growth conditions. The epitaxial growth of α-Al2O3 films on single-crystal Nb films at ∼500 °C by the MLE method is also confirmed for the first time.
ACCESSION #
9824494

 

Related Articles

  • Suppression of growth domains in epitaxial ZnO films on structured (0001) sapphire surface. Vlasov, V.; Butashin, A.; Kanevskii, V.; Muslimov, A.; Babaev, V.; Ismailov, A.; Rabadanov, M. // Crystallography Reports;May2014, Vol. 59 Issue 3, p422 

    Zinc oxide layers have been grown by magnetron sputtering in an oxygen atmosphere on structured sapphire surfaces. The formation of ZnO islands oriented in two directions (the so-called domains) was observed on (0001) AlO surfaces with steps spaced by a distance from several thousands to several...

  • Contraction of aluminum oxide thin layers in optical heterostructures. Durand, O.; Wyckzisk, F.; Olivier, J.; Magis, M.; Galtier, P.; De Rossi, A.; Calligaro, M.; Ortiz, V.; Berger, V.; Leo, G.; Assanto, G. // Applied Physics Letters;9/29/2003, Vol. 83 Issue 13, p2554 

    We precisely determine the contraction of AlAs in multilayer optical waveguides, associated with selective oxidation of AlAs/GaAs epitaxial heterostructures. The average thickness of each layer was determined via x-ray reflectometry before and after oxidation, yielding an induced shrinkage of...

  • Growth and spin-resolved photoemission spectroscopy of the epitaxial α-Al[sub 2]O[sub 3]/Fe(110) system. Dedkov, Yu. S.; Fonin, M.; Rüdiger, U.; Güntherodt, G. // Applied Physics Letters;9/30/2002, Vol. 81 Issue 14, p2584 

    Electronic and structural properties of epitaxial ultrathin aluminum oxide layers grown on epitaxial Fe(110) films were investigated at room temperature by means of spin-, angle- and energy-resolved photoemission spectroscopy. A spin polarization of - ( 15±5)% near the Fermi energy E[sub F]...

  • Nanometer-thin ALD-Al2O3 for the improvement of the structural quality of AlN grown on sapphire substrate by MOVPE. Banal, Ryan G.; Imura, Masataka; Tsuya, Daiju; Iwai, Hideo; Koide, Yasuo // Physica Status Solidi. A: Applications & Materials Science;Feb2017, Vol. 214 Issue 2, pn/a 

    The epitaxial quality of AlN grown on sapphire substrate by metalorganic vapor phase epitaxy (MOVPE) is improved upon the incorporation of nanometer-thin amorphous Al2O3 interlayer by atomic layer deposition (ALD). The critical ALD-Al2O3 thickness is determined to be around 1 nm, where the AlN...

  • Epitaxial growth of (111)-oriented spinel CoCr2O4/Al2O3 heterostructures. Liu, Xiaoran; Choudhury, D.; Cao, Yanwei; Middey, S.; Kareev, M.; Meyers, D.; Kim, J.-W.; Ryan, P.; Chakhalian, J. // Applied Physics Letters;2/11/2015, Vol. 106 Issue 7, p1 

    High quality (111)-oriented CoCr2O4/Al2O3 heterostructures were synthesized on the sapphire (0001) single crystal substrates by pulsed laser deposition. The structural properties are demonstrated by in-situ reflection high energy electron diffraction, atomic force microscopy, X-ray reflectivity,...

  • Doping effects on the kinetics of solid-phase epitaxial growth of amorphous alumina thin films.... Ning Yu; Simpson, Todd W. // Applied Physics Letters;8/14/1995, Vol. 67 Issue 7, p924 

    Examines the effects of doping on the kinetics of solid-phase epitaxial growth of amorphous alumina thin films. Method of investigating the kinetics of the epitaxial growth; Observation of a phase transformation sequence; Effect of the presence of dopants on the overall transformation rate.

  • Mixing of Fe[sub 2]O[sub 3] markers into amorphous and crystalline alumina. Cooper, Elizabeth A.; Nastasi, Michael // Applied Physics Letters;5/30/1994, Vol. 64 Issue 22, p2958 

    Examines thin markers of iron oxide between sapphire and amorphous alumina. Assessment of marker mixing by the Rutherford backscattering spectroscopy; Production of thin film samples by e-beam deposition; Quantification of the iron oxide marker spreading after ion/thermal treatment.

  • Characterization of ultrathin insulating Al2O3 films grown on Nb(110)/sapphire(0001) by tunneling spectroscopy and microscopy. Dietrich, Ch.; Boyen, H.-G.; Koslowski, B. // Journal of Applied Physics;8/1/2003, Vol. 94 Issue 3, p1478 

    Various structural as well as chemical properties of ultrathin Al[sub 2]O[sub 3] films prepared on Nb(110)/ sapphire(0001) were analyzed. For this purpose, in a first step, 40-nm-thick Nb(110) films are grown epitaxially by sputtering on top of sapphire(0001). The Nb(110) films are (1 × 1)...

  • Stability of trapped charges in sapphires and alumina ceramics: Evaluation by secondary electron emission. Zarbout, K.; Ahmed, A. Si; Moya, G.; Bernardini, J.; Goeuriot, D.; Kallel, A. // Journal of Applied Physics;Mar2008, Vol. 103 Issue 5, p054107 

    The stability of trapped charges in sapphires and alumina ceramics is characterized via an experimental parameter expressing the variation of the secondary electron emission yield between two electron injections performed in a scanning electron microscope. Two types of sapphires and...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics