Identification of a bistable defect in silicon: The carbon interstitial-carbon substitutional pair

Song, L. W.; Benson, B. W.; Watkins, G. D.
October 1987
Applied Physics Letters;10/12/1987, Vol. 51 Issue 15, p1155
Academic Journal
By using a combination of deep level transient spectroscopy (DLTS) and electron paramagnetic resonance techniques applied to samples of varying compositions, we identify the bistable defect at Ec -0.17 eV in irradiated n-type silicon as a carbon interstitial-carbon substitutional pair. It arises upon annealing of interstitial carbon, which is also the precursor to a remarkable recently discovered four-level multistable defect which we now tentatively identify as a carbon-phosphorus pair. We demonstrate a new simple method for distinguishing the bistable carbon-carbon pair defect from the oxygen-vacancy pair under the same DLTS peak.


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