TITLE

Rapid annealing of Hg1-xCdxTe by immersion in a hot mercury bath

AUTHOR(S)
Kalish, R.; Fastow, R.; Richter, V.; Shaanan, M.
PUB. DATE
October 1987
SOURCE
Applied Physics Letters;10/12/1987, Vol. 51 Issue 15, p1158
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A simple technique for annealing ion implanted Hg1-xCdxTe in a mercury atmosphere has been developed. In this technique, Hg1-xCdxTe is sandwiched between two silicon wafers and immersed in a hot mercury bath. This permits rapid annealing at well defined temperatures and times. Indium-implanted Hg1-xCdxTe (x=0.23 and x=0.7) samples have been annealed using this method at temperatures ranging from 260 to 350 °C and for times ranging from 3 s to 1 h. The near surface crystalline quality, as measured by ion channeling, improved after annealing and was comparable to that obtained by other annealing techniques. No change in surface stoichiometry, as measured by particle-induced x-ray emission, was detected in the Hg0.77Cd0.23Te samples.
ACCESSION #
9824481

 

Related Articles

  • Backscattering spectrometry and ion channeling studies of heavily implanted As+ in silicon. Brizard, C.; Regnard, J.R.; Allain, J.L.; Bourret, A.; Dubus, M.; Armigliato, A.; Parisini, A. // Journal of Applied Physics;1/1/1994, Vol. 75 Issue 1, p126 

    Backscattering and ion channeling measurements have been carried out on <100> silicon wafers implanted with a dose of 3×1016 As+/cm2. These samples have been submitted to laser annealing and then to various thermal annealings in the 350–1000 °C temperature range. Three different...

  • Annealing of damage and stability of implanted ions in ZnO crystals. Sonder, E.; Zuhr, R. A.; Valiga, R. E. // Journal of Applied Physics;8/1/1988, Vol. 64 Issue 3, p1140 

    Presents a study on the annealing of bismuth, chromium and manganese implanted in zinc oxide examined by Rutherford backscattering, ion channeling and secondary ion mass spectroscopy. Experimental techniques; Results; Discussion.

  • Effect of annealing on carrier density and Curie temperature in epitaxial (Ga,Mn)As thin films. Sørensen, B. S.; Lindelof, P. E.; Sadowski, J.; Mathieu, R.; Svedlindh, P. // Applied Physics Letters;4/7/2003, Vol. 82 Issue 14, p2287 

    We report a clear correspondence between changes in the Curie temperature and carrier density upon annealing in epitaxially grown (Ga,Mn)As layers with thicknesses in the range between 5 and 20 nm. The changes are dependent on the layer thickness, indicating that the (Ga,Mn)As-GaAs interface has...

  • Pt/PBZr...Ti...O... interfacial and Schottky barrier formation studied by x-ray photoelectron... Takatani, Shinichiro; Miki, Hiroshi // Journal of Applied Physics;6/1/1999, Vol. 85 Issue 11, p7784 

    Studies the lead zirconate titanate (PZT) interfacial reaction caused by low-temperature annealing and resulting change in the surface Fermi level position using the x-ray photoelectron spectroscopy (XPS). Experimental framework of the study; Effects of annealing prior to platinum (Pt)...

  • Temperature rise induced by a cw laser beam revisited. Liarokapis, E.; Raptis, Y. S. // Journal of Applied Physics;6/15/1985, Vol. 57 Issue 12, p5123 

    Presents a study which examined the problem of spatial distribution of the temperature rise due to a cw laser focused on the surface of an absorbing material. Advantage of using laser annealing for improving and processing semiconducting materials; Analysis of the Green's function which...

  • Annealing of Sb+-ion-implanted Si. Holland, O. W.; Fathy, D. // Journal of Applied Physics;6/1/1988, Vol. 63 Issue 11, p5326 

    Presents a study examined the behavior of antimony-implanted silicon during rapid thermal annealing at different annealing temperatures and implantation doses. Advantages of the rapid thermal annealing; Application of the transmission electron microscopy and Rutherford backscattering and...

  • Annealing effects on the conduction mechanisms of p[sup +]-amorphous- Si[sub 0.8]C[sub 0.2]:H/n-crystalline-Si diodes. Marsal, L. F.; Martin, I.; Pallares, J.; Orpella, A.; Alcubilla, R. // Journal of Applied Physics;8/15/2003, Vol. 94 Issue 4, p2622 

    P[SUP+]-type hydrogenated amorphous silicon-carbon (a-Si[SUB1-x]C[SUBx] :H) on n-type crystalline silicon (c-Si) heterojunction diodes were fabricated and characterized electrically. The effects of thermal annealing on the electrical transport properties of a-Si[SUB0.8]C[SUB0.2]:H/c-Si diodes...

  • Room temperature luminescence from ZnSe[sub 1-x]Te[sub x] (x<1%) epilayers grown on (001) GaAs. Jacob, A. P.; Zhao, Q. X.; Willander, M.; Yang, C. S.; Chou, W. C. // Journal of Applied Physics;8/15/2003, Vol. 94 Issue 4, p2337 

    Photoluminescence experiments have been performed to systematically study the effect of thermal processing on ZnSe[SUB1-x]Te[SUBx] (x < 1%) epilayers. Our results show that, a ZnSeTe epilayer under proper post growth thermal annealing can emit light in the visible range of 5500-7000 Ã… at...

  • Interfacial reaction in the sputter-deposited SiO2/Ti0.1W0.9 antifuse system. Baek, Jong Tae; Park, Hyung-Ho; Cho, Kyung-Ik; Yoo, Hyung Joun; Kang, Sang Won; Ahn, Byung Tae // Journal of Applied Physics;12/15/1995, Vol. 78 Issue 12, p7074 

    Presents a study which investigated the effects of annealing temperature on the interfacial reactions and antifuse I-V characteristics of ultra thin silicon dioxide layer deposited on Ti[sub0.1]W[sub.09] substrate. Analysis of the interfacial reaction; Experimental results and discussion;...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics