Rapid annealing of Hg1-xCdxTe by immersion in a hot mercury bath

Kalish, R.; Fastow, R.; Richter, V.; Shaanan, M.
October 1987
Applied Physics Letters;10/12/1987, Vol. 51 Issue 15, p1158
Academic Journal
A simple technique for annealing ion implanted Hg1-xCdxTe in a mercury atmosphere has been developed. In this technique, Hg1-xCdxTe is sandwiched between two silicon wafers and immersed in a hot mercury bath. This permits rapid annealing at well defined temperatures and times. Indium-implanted Hg1-xCdxTe (x=0.23 and x=0.7) samples have been annealed using this method at temperatures ranging from 260 to 350 °C and for times ranging from 3 s to 1 h. The near surface crystalline quality, as measured by ion channeling, improved after annealing and was comparable to that obtained by other annealing techniques. No change in surface stoichiometry, as measured by particle-induced x-ray emission, was detected in the Hg0.77Cd0.23Te samples.


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