Performance characteristics of InGaAs/GaAs and GaAs/InGaAlAs coherently strained superlattice photodiodes

Das, Utpal; Zebda, Yousef; Bhattacharya, Pallab; Chin, Albert
October 1987
Applied Physics Letters;10/12/1987, Vol. 51 Issue 15, p1164
Academic Journal
The properties of In0.24Ga0.76As/GaAs and GaAs/In0.05Ga0.58Al0.37As superlattice photodiodes grown by molecular beam epitaxy have been investigated. From the temporal response characteristics, deconvolved rise times ∼60–100 ps are obtained. The measured responsivities of the photodiodes with dark currents of 5–10 nA at 10 V are ∼0.4 A/W, which correspond to peak external quantum efficiencies of ∼60%. These results indicate that very high performance photodiodes can be realized with strained layers.


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