TITLE

Reflection high-energy electron diffraction intensity oscillation study of InGaAs and InAlAs on InP: Application to pseudomorphic heterostructures

AUTHOR(S)
Lievin, J.-L.; Fonstad, C. G.
PUB. DATE
October 1987
SOURCE
Applied Physics Letters;10/12/1987, Vol. 51 Issue 15, p1173
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
This letter reports the first reflection high-energy electron diffraction intensity oscillation study of strained, pseudomorphic In1-xGaxAs and In1-yAlyAs grown by molecular beam epitaxy on InP substrates. Strain-induced effects are studied over a broad range (up to 3%) of positive and negative mismatch. During mismatched growth, an abnormal damping of the oscillation intensity is seen which leads to the identification of a threshold thickness above which monolayer by monolayer growth no longer occurs during uninterrupted growth. This thickness is about a factor of 5 smaller than recently calculated and measured values of the critical thickness at which dislocations appear. This observation is believed to have important implications for the growth of pseudomorphic devices.
ACCESSION #
9824471

 

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