TITLE

Interface structure and lattice mismatch of epitaxial CoSi2 on Si(111)

AUTHOR(S)
Zegenhagen, J.; Huang, K.-G.; Hunt, B. D.; Schowalter, L. J.
PUB. DATE
October 1987
SOURCE
Applied Physics Letters;10/12/1987, Vol. 51 Issue 15, p1176
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have used the x-ray standing-wave technique and bulk x-ray diffraction to investigate the structural properties of thin CoSi2 layers grown epitaxially on Si(111). The perpendicular lattice mismatch with respect to the Si substrate was found to be -0.0152±0.0003 and -0.016±0.001 for 6-nm-thick and 16-nm-thick layers, respectively. The distance between Si(111) and the first Co layer was measured to be (0.288±0.005) nm and is thus stretched by (0.014±0.005) nm compared with a value determined by Si-like bulk bond length. The Co atoms are attached to the Si(111) dangling bonds in agreement with the model of fivefold coordinated metal atoms at the interface.
ACCESSION #
9824468

 

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