Electronic properties of sol-gel-derived oxides on silicon

Weimer, R. A.; Lenahan, P. M.; Marchione, T. A.; Brinker, C. J.
October 1987
Applied Physics Letters;10/12/1987, Vol. 51 Issue 15, p1179
Academic Journal
Sol-gel-derived SiO2, borosilicate, and aluminosilicate thin films deposited on silicon and heated for 5 min at temperatures of 1000 °C or lower exhibit dielectric strength as great as 5 MV/cm and interface state densities as low as ∼1×1011/cm2 eV. These values represent significant improvements over previous sol-gel-derived oxides on semiconductors and indicate that sol-gel processing can provide device quality oxides in situations where native oxides are unavailable or exhibit poor dielectric behavior, e.g., amorphous, hydrogenated silicon or III-V compound semiconductors.


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