Low-loss InGaAs/InP multiple quantum well optical electroabsorption waveguide modulator

Koren, U.; Miller, B. I.; Koch, T. L.; Eisenstein, G.; Tucker, R. S.; Bar-Joseph, I.; Chemla, D. S.
October 1987
Applied Physics Letters;10/12/1987, Vol. 51 Issue 15, p1132
Academic Journal
An optical electroabsorption waveguide modulator is described based on the quantum-confined Stark effect in an InGaAs/InP multiple quantum well waveguide. The optical modulator has a high on/off ratio (47:1) with very low insertion loss (2.9 dB) and a 3-dB modulation bandwidth of 3.0 GHz at 0.1 mW optical input power.


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