Defect annihilation in shallow p+ junctions using titanium silicide

Wen, D. S.; Smith, P. L.; Osburn, C. M.; Rozgonyi, G. A.
October 1987
Applied Physics Letters;10/12/1987, Vol. 51 Issue 15, p1182
Academic Journal
The residual extended defects due to end-of-range ion implantation damage can be totally eliminated by Ti silicidation. Shallow p+ junctions were formed by amorphizing the silicon with Ge implantation (85 keV, 1×1015 cm-2) prior to implanting boron (85 keV, 1×1015 cm-2), recrystallizing the amorphous region at 550 °C, and then rapid thermal annealing at 1050 °C for 10 s. A buried sheet of interstitial dislocation loops lying below the surface remained. However, following a self-aligned Ti silicide process, the end-of-range defects due to Ge ion implantation damage were no longer observed in cross-sectional transmission electron micrographs. The annihilation of these end-of-range interstitial dislocation loops is attributed to the injection of vacancies during Ti silicidation.


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