TITLE

New photoluminescence defect at 1.0192 eV in silicon molecular beam epitaxy layers ascribed to Cu

AUTHOR(S)
Sauer, R.; Asom, M.; People, R.; Lang, D. V.; Kimerling, L. C.; Bean, J. C.
PUB. DATE
October 1987
SOURCE
Applied Physics Letters;10/12/1987, Vol. 51 Issue 15, p1185
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report a new photoluminescence defect spectrum with a no-phonon transition at 1.0192 eV which emerges in many silicon layers grown on silicon substrates by molecular beam epitaxy. Comparison of the no-phonon transition and the chief local mode (hω=7.5 meV) to the well-established Cu-related spectrum at 1.0145 eV suggests that the new defect incorporates Cu as well. Deep level transient measurements support the presence of Cu in the epilayers. We suggest that this defect spectrum has recently been observed by others but was not identified and associated with Cu.
ACCESSION #
9824429

 

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