TITLE

New method to relax thermal stress in GaAs grown on Si substrates

AUTHOR(S)
Sakai, Shiro
PUB. DATE
October 1987
SOURCE
Applied Physics Letters;10/5/1987, Vol. 51 Issue 14, p1069
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A new method to grow stress-free GaAs on bent Si substrates is proposed and demonstrated by metalorganic chemical vapor deposition. The stress produced by the thermal expansion coefficient difference of Si and GaAs is compensated by the external mechanical strain applied in the substrate at high temperature. The photoluminescence peak energy of GaAs on Si becomes almost the same as that of the stress-free GaAs on GaAs grown by liquid phase epitaxy by applying this method.
ACCESSION #
9824416

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics