TITLE

Deep level transient spectroscopy studies of epitaxial silicon layers on silicon-on-insulator substrates formed by oxygen implantation

AUTHOR(S)
McLarty, P. K.; Cole, J. W.; Galloway, K. F.; Ioannou, D. E.; Bernacki, S. E.
PUB. DATE
October 1987
SOURCE
Applied Physics Letters;10/5/1987, Vol. 51 Issue 14, p1078
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Deep level transient spectroscopy was applied to study silicon epitaxial layers of varying thickness grown on silicon-on-insulator substrates formed by oxygen implantation. For 3-μm-thick layers no traps were detected. For 1.0-, 2.0-, and 2.5-μm-thick layers electron traps were found with levels 0.34, 0.32, and 0.37 eV below the conduction-band edge, and corresponding capture cross sections of ∼2.0×10-7, 6.0×10-18, and 5.0×10-7 cm2. These levels were found to be uniformly distributed across the wafer. It was also observed that the trap concentration is a decreasing function of epilayer thickness.
ACCESSION #
9824411

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics