TITLE

Reactive ion etch process with highly controllable GaAs-to-AlGaAs selectivity using SF6 and SiCl4

AUTHOR(S)
Salimian, S.; Cooper, C. B.; Norton, R.; Bacon, J.
PUB. DATE
October 1987
SOURCE
Applied Physics Letters;10/5/1987, Vol. 51 Issue 14, p1083
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The use of a reactive ion etch process with high selectivity for etching GaAs layers and stopping on underlying AlGaAs layers is reported. A key feature is the high degree of control that can be maintained over the GaAs-to-AlGaAs selectivity by changing the SF6/SiCl4 ratio while keeping other etch parameters such as pressure, dc bias, or power constant. Values of the GaAs-to-AlGaAs selectivity can be varied from 1 to 500. Diluent gases such as helium can be added to reduce the etch rate, which is important to avoid damage to sensitive device structures and to the overhang profile of resist materials used for liftoff metallization. The application of this etch process for high electron mobility transistor fabrication is discussed.
ACCESSION #
9824407

 

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