Resolution of amorphous silicon thin-film transistor instability mechanisms using ambipolar transistors

van Berkel, C.; Powell, M. J.
October 1987
Applied Physics Letters;10/5/1987, Vol. 51 Issue 14, p1094
Academic Journal
Bias stress measurements on amorphous silicon-silicon nitride ambipolar thin-film transistors give clear evidence for the co-existence of two distinct instability mechanisms: the metastable creation of states in the a-Si:H layer and charge trapping in the a-SiN:H layer. The creation of metastable states in the a-Si:H is found to dominate at low positive bias, while charge trapping in the nitride dominates at larger positive bias and negative bias.


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