TITLE

Resolution of amorphous silicon thin-film transistor instability mechanisms using ambipolar transistors

AUTHOR(S)
van Berkel, C.; Powell, M. J.
PUB. DATE
October 1987
SOURCE
Applied Physics Letters;10/5/1987, Vol. 51 Issue 14, p1094
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Bias stress measurements on amorphous silicon-silicon nitride ambipolar thin-film transistors give clear evidence for the co-existence of two distinct instability mechanisms: the metastable creation of states in the a-Si:H layer and charge trapping in the a-SiN:H layer. The creation of metastable states in the a-Si:H is found to dominate at low positive bias, while charge trapping in the nitride dominates at larger positive bias and negative bias.
ACCESSION #
9824399

 

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