TITLE

High-speed operation of InP metal-insulator-semiconductor field-effect transistors grown by chloride vapor phase epitaxy

AUTHOR(S)
Antreasyan, A.; Garbinski, P. A.; Mattera, V. D.; Temkin, H.; Abeles, J. H.
PUB. DATE
October 1987
SOURCE
Applied Physics Letters;10/5/1987, Vol. 51 Issue 14, p1097
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report the millimeter-wave performance of enhancement mode InP metal-insulator-semiconductor field-effect transistors grown by chloride vapor phase epitaxy. For a gate length of 1 μm we have measured a current gain cutoff frequency of 29 GHz and an electron velocity of 2.5×107 cm/s, close to a theoretical current gain cutoff frequency of 40 GHz. This represents the fastest InP-based field-effect transistor ever demonstrated, and surpasses state-of-the-art AlGaAs/GaAs modulation-doped field-effect transistors having similar gate length.
ACCESSION #
9824396

 

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