TITLE

Planar-embedded InGaAsP/InP heterostructure laser with a semi-insulating InP current-blocking layer grown by metalorganic chemical vapor deposition

AUTHOR(S)
Sanada, T.; Nakai, K.; Wakao, K.; Kuno, M.; Yamakoshi, S.
PUB. DATE
October 1987
SOURCE
Applied Physics Letters;10/5/1987, Vol. 51 Issue 14, p1054
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We used metalorganic chemical vapor deposition to fabricate a planar-embedded InGaAsP/InP heterostructure laser with a semi-insulating InP current-blocking layer. The laser exhibits cw operation with a low, 20 mA threshold current and a high external differential quantum efficiency of 40% at room temperature. Measurements have also shown a small-signal frequency response of 10 GHz due to an extremely small parasitic capacitance of 3.5 pF.
ACCESSION #
9824378

 

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