High-efficiency Al0.3Ga0.7As solar cells grown by molecular beam epitaxy

Amano, Chikara; Sugiura, Hideo; Ando, Koshi; Yamaguchi, Masafumi; Saletes, Anne
October 1987
Applied Physics Letters;10/5/1987, Vol. 51 Issue 14, p1075
Academic Journal
This letter reports the growth of high-efficiency Al0.3Ga0.7As solar cells by molecular beam epitaxy. As the growth temperature increases from 650 to 750 °C, the concentration of midgap electron traps in the active layers decreases from 4×1015 to less than 3×1013 cm-3 and the hole diffusion length in the layers improves from 2.0 to 2.6 μm. For cells grown at 750 °C, an efficiency of 14.6% (AM1.5, 100 mW/cm2 for an active area) is obtained.


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