TITLE

Resonant level lifetime in GaAs/AlGaAs double-barrier structures

AUTHOR(S)
Bahder, Thomas B.; Morrison, Clyde A.; Bruno, John D.
PUB. DATE
October 1987
SOURCE
Applied Physics Letters;10/5/1987, Vol. 51 Issue 14, p1089
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The lifetime of the lowest quasibound state localized between the barriers of a GaAs/AlGaAs double-barrier structure is calculated as a function of barrier and well dimensions. The results are consistent with high-frequency experiments.
ACCESSION #
9824365

 

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