TITLE

NiSi2 precipitation in nickel-implanted silicon films

AUTHOR(S)
Cammarata, R. C.; Thompson, C. V.; Tu, K. N.
PUB. DATE
October 1987
SOURCE
Applied Physics Letters;10/5/1987, Vol. 51 Issue 14, p1106
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on the formation of nickel silicide in nickel-implanted amorphous silicon thin films. We have found that during annealing, precipitates of NiSi2 form in the interior of the film. This is in contrast with results for interfacial reactions between nickel films and silicon, where the first phases to appear are Ni2Si and NiSi on amorphous silicon, and Ni2Si on crystalline silicon. We suggest that these results reflect differences in surface energies and their effects on silicide nucleation.
ACCESSION #
9824361

 

Related Articles

  • Frequency-resolved photocurrent studies of a-Se. Kaplan, R. // Applied Physics A: Materials Science & Processing;1997, Vol. 64 Issue 2, p171 

    Optically modulated photocurrent response of amorphous selenium (a-Se) thin films was measured between 20 K and 295 K, by using the in-quadrature frequency-resolved spectroscopy method. The results show that the modulated photocurrent depends on external parameters such as excitation light...

  • Comparison of electro-optic lead-lanthanum zirconate titanate films on crystalline and glass.... Preston, K.D.; Haertling, G.H. // Applied Physics Letters;6/8/1992, Vol. 60 Issue 23, p2831 

    Demonstrates the production of lead-lanthanum zirconate titanate (PLZT) thin films on glass substrates. Derivation of PLZT from a water-soluble acetate precursor system; Application of a lanthanum-modified lead titanate buffer layer; Comparison of the electro-optic behavior between films...

  • Characterization of a-C:H:N deposition from CH4/N2 rf plasmas using optical emission spectroscopy. Clay, K. J.; Speakman, S. P.; Amaratunga, G. A. J.; Silva, S. R. P. // Journal of Applied Physics;5/1/1996, Vol. 79 Issue 9, p7227 

    Presents information on a study that characterized optical emission spectra from CH[sub4]/N[sub2] radio frequency plasmas, which are used for the deposition of nitrogen-containing hydrogenated amorphous carbon thin films. Experimental procedure; Results and discussion on the study; Conclusions.

  • Characterization of sputtered amorphous platinum dioxide films. Maya, L.; Riester, L. // Journal of Applied Physics;12/1/1998, Vol. 84 Issue 11, p6382 

    Presents information on a study about the characterization of sputtered amorphous platinum dioxide films. Methodology of the experiment; Composition of a variety of films used in the experiment; Background about the x-ray diffraction pattern of the platinum dioxide films; Electrical and optical...

  • Thermal conductivity of amorphous carbon thin films. Bullen, Andrew J.; O'Hara, Keith E.; Cahill, David G.; Monteiro, Othon; Keudell, Achim von // Journal of Applied Physics;12/1/2000, Vol. 88 Issue 11, p6317 

    Thermal conductivities Λ of amorphous carbon thin films are measured in the temperatures range 80-400 K using the 3ω method. Sample films range from soft a-C:H prepared by remote-plasma deposition (Λ=0.20 W m[sup -1] K[sup -1] at room temperature) to amorphous diamond with a large...

  • Formation of amorphous films by solid-state reaction in an immiscible Y-W system. Chen, Y.G.; Liu, B.X. // Applied Physics A: Materials Science & Processing;1997, Vol. 65 Issue 1, p73 

    According to an estimation of interfacial free energy, Y-W multilayered films were properly designed and subject to thermal annealing. The solid-state reaction experiments demonstrated that Y-W amorphous alloy films were indeed formed in this immiscible system provided the multilayered films...

  • The Optical Properties and Quantum-Size Effects in the Amorphous Hydrogenized a-C:H/a-Si:H Diamond-Like Films. Babaev, A. A.; Abdulvagabov, M. Sh.; Gabibov, F. S. // International Journal of Modern Physics B: Condensed Matter Phys;3/20/2002, Vol. 16 Issue 6/7, p912 

    It is studied the absorption edge and photoluminescence (4.2-900 K) in the a-C:H films on silica substrates prepared by the decomposition of 10%CH[sub 4]+90%Ar gas mixture in the RF plasma under various growth conditions E/p (E — electric field strength, p — gas mixture pressure)....

  • Formation of amorphous interlayers by solid-state diffusion in ultrahigh-vacuum-deposited... Cheng, J.Y.; Chen, L.J. // Applied Physics Letters;1/7/1991, Vol. 58 Issue 1, p45 

    Studies the formation of amorphous interlayers in ultrahigh-vacuum-deposited polycrystalline Nb and Ta thin films on Si(111) by cross-sectional transmission electron microscopy. Linear growth law followed by the growth of amorphous interlayers; Amorphous interlayer/crystalline silicon interface.

  • Angle-dependent photoluminescence spectra of hydrogenated amorphous silicon thin films. Marra, D. C.; Marra, D.C.; Aydil, E. S.; Aydil, E.S.; Joo, S.-J.; Yoon, E.; Srdanov, V. I.; Srdanov, V.I. // Applied Physics Letters;11/20/2000, Vol. 77 Issue 21 

    Multiple sharp peaks were observed in the visible photoluminescence spectra of amorphous silicon thin films, prepared by ultrahigh vacuum electron cyclotron resonance chemical vapor deposition on oxidized silicon substrates. The angular dependence of the photoluminescence, measured by a...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics