Nearly degenerate four-wave mixing in a traveling-wave semiconductor laser amplifier

Inoue, Kyo; Mukai, Takaaki; Saitoh, Tadashi
October 1987
Applied Physics Letters;10/5/1987, Vol. 51 Issue 14, p1051
Academic Journal
Nearly degenerate four-wave mixing (NDFWM) in a traveling-wave semiconductor laser amplifier is demonstrated by simultaneously injecting two lights of slightly different frequencies in the same direction. A new frequency light at an expected frequency for NDFWM is observed with the same order of output as that of the injected light. The output power ratio of the three beams is strongly dependent on the sign of the frequency detuning. Theoretical analysis, in which the carrier rate equation is coupled with nonlinear Maxwell’s equations, explains the experimental results well. The observed behaviors are attributed to a unique third-order nonlinearity stemming from saturation-induced refractive index change in the semiconductor gain medium.


Related Articles

  • Gain nonlinearities in semiconductor lasers and amplifiers. DeFonzo, Alfred P.; Gomatam, B. // Applied Physics Letters;2/12/1990, Vol. 56 Issue 7, p611 

    A concise and fundamentally straightforward physical model that accounts for the nonlinear gain in both semiconductor amplifiers and lasers is presented. Calculations based on this model yield results that agree very well with observed transient gain recovery dynamics in semiconductor laser...

  • Er-diffused Ti:LiNbO[sub 3] waveguide laser of 1563 and 1576 nm emission wavelengths. Becker, P.; Brinkmann, R. // Applied Physics Letters;9/14/1992, Vol. 61 Issue 11, p1257 

    Examines the first continuous wave and pulsed mode operation of an erbium (Er)-diffused Ti:LNbO[sub 3] monomode waveguide laser. Use of a tunable Tl:KCl color center laser as a pump source; Achievement of a coupled power pump with an oscillation threshold for the 1576 nanometer emission line;...

  • Observation of carrier heating in a 1.5 mum band multi-quantum-well semiconductor laser.... Nido, Masaaki; Suzuki, Akira // Applied Physics Letters;2/7/1994, Vol. 64 Issue 6, p681 

    Investigates the time development of electron temperature in multiple quantum well (MQW)-semiconductor laser amplifier. Observation of time development in amplified spontaneous emission spectrum; Rise of electron temperature; Carrier transport in MQW structures for semiconductor laser applications.

  • Limitations on ultrafast optical switching in a semiconductor laser amplifier operating at... Kao, Y.-H.; Xia, T. J. // Journal of Applied Physics;11/1/1999, Vol. 86 Issue 9, p4740 

    Presents information on a study which examined the ultrafast optical switching in a semiconductor laser amplifier (SLA) at transparency current under a strong pump condition. Cross-polarized pump-probe experiments; Experimental results for ultrafast switching in SLA; Coupled propagation equations.

  • A Novel Multi-Service Passive Optical Network Based On The Wavelength-Division-Multiplexed Technology. Ping Li; Zhenping Lan; Yuru Wang; Huanlin Lv; Nianyu Zou // Applied Mechanics & Materials;2014, Issue 538, p490 

    The simulation diagram of WDM-PON is proposed, utilizing DFB laser diodes as light sources, array waveguide grating as multiplexer for signals' split and amplifiers as gain generator, respectively, to realize networking for both sending and receiving units. WDM-PON system with 128 branches...

  • Frequency domain approach for time-resolved pump-probe microscopy using intensity modulated laser diodes. Miyazaki, J.; Kawasumi, K.; Kobayashi, T. // Review of Scientific Instruments;2014, Vol. 85 Issue 9, p1 

    We present a scheme for time-resolved pump-probe microscopy using intensity modulated laser diodes. The modulation frequencies of the pump and probe beams are varied up to 500 MHz with fixed frequency detuning typically set at 15 kHz. The frequency response of the pump-probe signal is detected...

  • Study of the characteristics of 976 nm Bragg grating external cavity semiconductor lasers. Yan, Zhong-Hua; Zhou, Shuai // Modern Physics Letters B;Jul2018, Vol. 32 Issue 19, pN.PAG 

    976 nm fiber Bragg grating (FBG) external cavity laser is the core component in erbium-doped fiber amplifiers (EDFA). In this paper, the theory model of FBG is modeled by transfer matrix method (TMM). The effects of Bragg grating length and modulation depth on the reflectivity, grating...

  • Wavelength conversion in tapered-waveguide laser diode amplifiers. Ghafouri-Shiraz, H. // Microwave & Optical Technology Letters;4/20/2005, Vol. 45 Issue 2, p134 

    Wavelength conversion using cross-gain modulation (XGM) in linear tapered-waveguide semiconductor laser amplifiers (SLAs) has been investigated theoretically and compared with the nontapered semiconductor laser amplifier. For example, we have found that for the linear tapered-waveguide SLA with...

  • ANALYSIS OF A SEMI-LINEAR TAPERED WAVEGUIDE LASER-DIODE AMPLIFIER. Ghafouri-Shiraz, H.; Tan, P. W.; Aruga, T. // Microwave & Optical Technology Letters;6/5/96, Vol. 12 Issue 2, p53 

    We have studied the performance characteristics of a semilinear tapered-waveguide laser-diode amplifier. It has been found that an improvement of over 10 dB in saturation output power can be obtained when the amplifier is properly designed. The effect of the output width of this amplifier on the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics