TITLE

Nature of the self-limiting effect in the low-pressure chemical vapor deposition of tungsten

AUTHOR(S)
Lifshitz, N.
PUB. DATE
September 1987
SOURCE
Applied Physics Letters;9/28/1987, Vol. 51 Issue 13, p967
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We propose a mechanism for the self-limiting effect which occurs in the low-pressure chemical vapor deposition of tungsten. When W is deposited by silicon reduction of tungsten hexafluoride WF6, the deposition suddenly ceases at an early stage. No such effect is observed in the deposition of Mo using analogous chemistry. We believe the self-limiting effect is due to the formation of nonvolatile lower fluorides of tungsten. Our hypothesis is supported by secondary ion mass spectroscopy studies which indicate the presence of fluorine (≊3%) in W films, whereas in Mo films the concentration of fluorine is an order of magnitude lower.
ACCESSION #
9824353

 

Related Articles

  • Growth of selective tungsten films on self-aligned CoSi2 by low pressure chemical vapor deposition. van der Putte, P.; Sadana, D. K.; Broadbent, E. K.; Morgan, A. E. // Applied Physics Letters;12/22/1986, Vol. 49 Issue 25, p1723 

    The selective deposition of tungsten films onto CoSi2 and onto Co by low pressure chemical vapor deposition and their material properties have been investigated with Auger electron spectroscopy, transmission electron microscopy, and Rutherford backscattering. When using WF6 and H2, uniformly...

  • Processing tungsten single crystal by chemical vapor deposition. Xiao, Zhigang; Zee, Ralph H.; Begg, Lester L. // AIP Conference Proceedings;2000, Vol. 504 Issue 1, p1454 

    A tungsten single crystal layer has been fabricated on molybdenum single crystal substrate through the hydrogen (H[sub 2]) reduction of the tungsten hexafluoride (WF[sub 6]) in low pressure. Substrate temperature, reaction chamber pressure, and flow rate of WF[sub 6] and H[sub 2], are critical...

  • New insights on nucleation of tungsten on insulators during selective chemical vapor deposition. Wilson, R. H.; Williams, A. G. // Applied Physics Letters;4/13/1987, Vol. 50 Issue 15, p965 

    Selective deposition of tungsten on metals and silicon in the presence of insulators is important in several very large scale integrated circuit applications. The results of experiments investigating this selectivity are reported. The influence of the total area and composition of the selective...

  • Containerless fabrication of tungsten single crystals using laser CVD for field emission applications. Björklund, K.L.; Ribbing, C.; Norde, H.; Boman, M. // Applied Physics A: Materials Science & Processing;2002, Vol. 75 Issue 4, p493 

    Single crystalline tungsten rods have been grown by a containerless technique in a cold atmosphere. The technique used was thermal laser assisted chemical vapour deposition (LCVD), and the crystals were grown from a reaction gas mixture of WF[sub 6] and H[sub 2] . Both separate crystals and...

  • Selective amplification of self-resistively heated laser-direct-written tungsten lines. Gottsleben, O.; Stuke, M. // Applied Physics Letters;6/27/1988, Vol. 52 Issue 26, p2230 

    Laser-direct-write pyrolytic deposition of tungsten at 514.5 nm, out of the WF6 /H2 reduction system, was carried out on Al2O3 substrates between sputtered-on gold contact pads. Heat, generated by pulsed current sent through the laser-induced microdeposit, is used to amplify the microstructure...

  • Kinetics of tungsten low-pressure chemical-vapor deposition using WF6 and SiH4 studied by in situ growth-rate measurements. Ammerlaan, J. A. M.; van der Put, P. J.; Schoonman, J. // Journal of Applied Physics;5/1/1993, Vol. 73 Issue 9, p4631 

    Presents a study that investigated the kinetics of tungsten low-pressure chemical-vapor deposition using WF[sub6] and SiH[sub4] by in situ growth-rate measurements. Experimental details; Results of the study; Conclusions.

  • Low-temperature annealing characteristics of chemical vapor deposited WSi2 film. Togei, R. // Journal of Applied Physics;5/15/1986, Vol. 59 Issue 10, p3582 

    Presents a study that focused on the resistivity annealing characteristics of tungsten silicide films made by the chemical vapor deposition technique. Background on silicide films that are made by physical vapor deposition techniques; Statistical data on the resistivity variations of the films.

  • High aspect ratio hole filling by tungsten chemical vapor deposition combined with a silicon sidewall and barrier metal for multilevel interconnection. Suguro, K.; Nakasaki, Y.; Shima, S.; Yoshii, T.; Moriya, T.; Tango, H. // Journal of Applied Physics;8/15/1987, Vol. 62 Issue 4, p1265 

    Presents a study that proposed a developed processing for high aspect ratio hole filling by tungsten chemical vapor deposition combined with a silicon sidewall technique and resist etch back. Description of the viahole filling process sequence; Step coverage for tungsten as a function of the...

  • Kr+ laser-induced chemical vapor deposition of W. Zhang, G. Q.; Szörényi, T.; Bäuerle, D. // Journal of Applied Physics;7/15/1987, Vol. 62 Issue 2, p673 

    Analyzes the krypton laser-induced pyrolytic direct writing of tungsten stripes by H[sub2] reduction of WF[sub6]. Details on the experiment; Results of the study; Conclusion.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics