TITLE

Depth profiles of defects in CdTe(100) overlayers grown by molecular beam epitaxy on GaAs(100)

AUTHOR(S)
Rauhala, E.; Keinonen, J.; Rakennus, K.; Pessa, M.
PUB. DATE
September 1987
SOURCE
Applied Physics Letters;9/28/1987, Vol. 51 Issue 13, p973
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The quality of crystal structure of CdTe(100) overlayers grown by molecular beam epitaxy on GaAs(100) substrates has been studied by x-ray diffraction and Rutherford backscattering/channeling methods. The depth distribution of displaced atoms in the overlayers with thicknesses varying from 1.6 to 3.1 μm shows that a defect-free surface is obtained when the film thickness is about 2 μm.
ACCESSION #
9824348

 

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