Depth profiles of defects in CdTe(100) overlayers grown by molecular beam epitaxy on GaAs(100)

Rauhala, E.; Keinonen, J.; Rakennus, K.; Pessa, M.
September 1987
Applied Physics Letters;9/28/1987, Vol. 51 Issue 13, p973
Academic Journal
The quality of crystal structure of CdTe(100) overlayers grown by molecular beam epitaxy on GaAs(100) substrates has been studied by x-ray diffraction and Rutherford backscattering/channeling methods. The depth distribution of displaced atoms in the overlayers with thicknesses varying from 1.6 to 3.1 μm shows that a defect-free surface is obtained when the film thickness is about 2 μm.


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