TITLE

Low-temperature nitridation of fluorinated silicon dioxide films in ammonia gas

AUTHOR(S)
Aritome, S.; Morita, M.; Tanaka, T.; Hirose, M.
PUB. DATE
September 1987
SOURCE
Applied Physics Letters;9/28/1987, Vol. 51 Issue 13, p981
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A new technique of growing nitrided oxide at low temperatures has been developed. Fluorine-enhanced thermal oxidation of silicon in O2+NF3 at temperatures below 800 °C and subsequent annealing of the fluorinated oxide in pure ammonia gas at the same temperature result in the formation of nitrided oxide. The dielectric breakdown strength of the fluorinated oxide is improved by the nitridation. Also, the nitrided oxide acts as a protective layer against alkaline ion contamination.
ACCESSION #
9824343

 

Related Articles

  • Anomalous positive charge trapping in thin nitrided oxides under high-field impulse stressing. Lim, P. S.; Lim, P.S.; Chim, W. K.; Chim, W.K. // Applied Physics Letters;10/23/2000, Vol. 77 Issue 17 

    An anomalously high density of positive trapped charges was observed in thin (43 Ã…) nitrided gate oxides subjected to high-field impulse stressing. The hot-hole generation occurs via a regenerative feedback mechanism, with minimal charge relaxation due to the short duration of the impulse...

  • Hole trapping in reoxidized nitrided silicon dioxide. Dunn, G. J. // Journal of Applied Physics;6/15/1989, Vol. 65 Issue 12, p4879 

    Focuses on a study that investigated radiation-induced hole trapping in nitrided oxides and reoxidized nitrided oxides. Experimental details; Results and discussion; Conclusions.

  • X-ray photoelectron spectroscopy and x-ray diffraction study of the thermal oxide on gallium.... Wolter, S.D.; Luther, B.P. // Applied Physics Letters;4/21/1997, Vol. 70 Issue 16, p2156 

    Examines the oxidation of single crystal gallium nitride in dry air. Observation of minimum oxide growth; Analysis of oxide as monoclinic B-Ga[sub 2]O[sub 3]; Indications of peak shifts; Investigations of corelevel binding energy; Presents characteristics peak shape of B-Ga[ub 2]O[sub 3] and...

  • Gate dielectrics prepared by double nitridation in NO and N[sub 2] O. Xu, J.P.; Lai, P.T.; Cheng, Y.C. // Applied Physics A: Materials Science & Processing;2000, Vol. 70 Issue 1, p101 

    Abstract. Oxynitrides prepared by double nitridation in nitric oxide (NO) and nitrous oxide (N[sub 2]O) are compared to the one with a single NO nitridation. Based on various hot-carrier stresses, harder oxide/Si interface, less charge trapping and generation of electron/hole traps in oxide, and...

  • Hydride vapor phase epitaxy growth of GaN on sapphire with ZnO buffer layers. Gu, S.; Zhang, R.; Shi, Y.; Zheng, Y.; Zhang, L.; Kuech, T.F. // Applied Physics A: Materials Science & Processing;2002, Vol. 74 Issue 4, p537 

    The initial stages and subsequent growth of GaN on sapphire using ZnO buffer layers is reported for the hydride vapor phase epitaxy technique. A high gas-phase supersaturation in the growth ambient was used to favor a rapid initial growth on the substrate. A subsequent growth step was employed...

  • A low-temperature solution for silicon nitride deposition. Laxman, Ravi K.; Anderson, Timothy D.; Mestemacher, John A. // Solid State Technology;Apr2000, Vol. 43 Issue 4, p79 

    Presents information on an experiment on the use of BTBAS (bis(tertiary-butylamino)silane) for silicon nitride deposition. Advantages of BTBAS; Discussion on the deposition of silicon nitride; Details on the BTBAS deposition of silicon oxynitride and silicon oxide; Conclusion.

  • Nanoparticles of wurtzite aluminum nitride from the nut shells. Qadri, S. B.; Gorzkowski, E. P.; Rath, B. B.; Feng, C. R.; Amarasinghe, R. // AIP Advances;Nov2016, Vol. 6 Issue 11, p115204-1 

    Nanoparticles of aluminum nitride were produced from a thermal treatment of a mixture of aluminum oxide (Al2O3) and shells of almond, cashew, coconuts, pistachio, and walnuts in a nitrogen atmosphere at temperatures in excess of 1450 ° C. By selecting the appropriate ratios of each nut powder...

  • Electrical characteristics of oxynitrides grown on textured single-crystal silicon. Ming-yin Hao; Lee, Jack C. // Applied Physics Letters;1/27/1992, Vol. 60 Issue 4, p445 

    Examines the electrical characteristics of oxynitrides grown on textured single-crystal silicon. Comparison with the interface state generation and breakdown characteristics of oxides and oxynitrides grown on untextured silicon; Importance of textured oxynitrides for electrical-erasable...

  • Physical properties of N[sub 2]O and NO-nitrided gate oxides grown on 4H SiC. Jamet, P.; Dimitrijev, S. // Applied Physics Letters;7/16/2001, Vol. 79 Issue 3 

    N[sub 2]O and NO nitridation by either annealing or direct growth of gate oxides on 4H SiC is analyzed in this letter. The analysis is based on x-ray photoelectron spectroscopy binding energies and secondary ion mass spectroscopy depth profiles of nitrogen at the SiO[sub 2]–SiC interface....

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics