TITLE

Room-temperature operation of hot-electron transistors

AUTHOR(S)
Levi, A. F. J.; Chiu, T. H.
PUB. DATE
September 1987
SOURCE
Applied Physics Letters;9/28/1987, Vol. 51 Issue 13, p984
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We demonstrate the first room-temperature operation of a double heterojunction unipolar hot-electron transistor. Our test structure has a current gain greater than 10 and a measured current drive capability in excess of 1200 A cm-2. The device uses an indirect, wide-band-gap AlSb0.92As0.08 emitter and the transistor base is a 100-Ã…-wide InAs layer.
ACCESSION #
9824341

 

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