Measurement of Au/GaAs/AlxGa1-xAs hetero-Schottky barrier height and GaAs/AlxGa1-xAs conduction-band discontinuity

Chen, H. Z.; Wang, H.; Ghaffari, A.; Morkoç, H.; Yariv, A.
September 1987
Applied Physics Letters;9/28/1987, Vol. 51 Issue 13, p990
Academic Journal
A new hetero-Schottky structure for the study of Schottky barriers and heterojunctions is discussed. Photoelectric measurements have revealed a correlation between Au/GaAs and Au/AlxGa1-xAs Schottky barrier heights and GaAs/AlxGa1-xAs heterojunction band offsets. The conduction-band discontinuity ΔEc in the GaAs/AlxGa1-xAs system is determined, and the ratio ΔEc:ΔEg is found to vary between 69±5% and 58±5% for x=0.15–0.48.


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