TITLE

Nature of the E’ deep hole trap in metal-oxide-semiconductor oxides

AUTHOR(S)
Witham, H. S.; Lenahan, P. M.
PUB. DATE
September 1987
SOURCE
Applied Physics Letters;9/28/1987, Vol. 51 Issue 13, p1007
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have found through a sequence of ultraviolet illuminations, electron spin resonance measurements, and capacitance versus voltage measurements, that the E’ deep hole trap in metal-oxide-semiconductor silicon dioxide is a fundamentally reversible defect. Our results are totally consistent with an oxygen vacancy model for the E’ deep hole trap, but our results are inconsistent with the bond strain gradient model for the deep hole trap in metal-oxide-semiconductor silicon dioxide.
ACCESSION #
9824329

 

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