TITLE

Low-temperature electron transport in a one-side modulation-doped Al0.33Ga0.67As/GaAs/Al0.33Ga0.67As single quantum well structure

AUTHOR(S)
Cho, N. M.; Ogale, S. B.; Madhukar, A.
PUB. DATE
September 1987
SOURCE
Applied Physics Letters;9/28/1987, Vol. 51 Issue 13, p1016
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The contributions of the remote ionized impurity scattering, alloy disorder scattering, and scattering due to band-edge discontinuity fluctuation to the low-temperature electron mobility in one-side modulation-doped Al0.33 Ga0.67 As/GaAs/Al0.33Ga0.67As single square quantum well structures are theoretically investigated via the memory function approach. The carrier wave functions and potential distributions used are obtained self-consistently. Dependence of mobility on quantum well width and spacer layer thickness shows that mobilities of the order of 106 cm2 /V s can be achieved in such structures.
ACCESSION #
9824325

 

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