Resonant tunneling through single layer heterostructures

Liu, H. C.
September 1987
Applied Physics Letters;9/28/1987, Vol. 51 Issue 13, p1019
Academic Journal
A new resonant tunneling process is discussed theoretically. The process relies on elastic intervalley transfers between different band minima, e.g., between Γ and X minima in a GaAs-AlAs system. Single layer GaAs-AlAs-GaAs heterostructures are analyzed. An effective mass envelope function approach is used, and a delta-function transfer potential at heterointerfaces is employed. A resonance in the transmission coefficient is clearly seen, which gives rise to a negative differential resistance region in the current-voltage characteristic.


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