TITLE

Chemical structure of nitrogen in amorphous silicon matrix

AUTHOR(S)
Singh, Jagriti; Budhani, R. C.
PUB. DATE
September 1987
SOURCE
Applied Physics Letters;9/28/1987, Vol. 51 Issue 13, p978
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Direct evidence of substitutional doping of nitrogen in ion beam deposited hydrogenated amorphous silicon, from analysis of infrared spectra and Si-2p core level shape measured with x-ray photoelectron spectroscopy (XPS), is presented. For the first time the XPS technique has been used to deduce the upper limit for substitutional solid solubility of the impurity.
ACCESSION #
9824293

 

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