Chemical structure of nitrogen in amorphous silicon matrix

Singh, Jagriti; Budhani, R. C.
September 1987
Applied Physics Letters;9/28/1987, Vol. 51 Issue 13, p978
Academic Journal
Direct evidence of substitutional doping of nitrogen in ion beam deposited hydrogenated amorphous silicon, from analysis of infrared spectra and Si-2p core level shape measured with x-ray photoelectron spectroscopy (XPS), is presented. For the first time the XPS technique has been used to deduce the upper limit for substitutional solid solubility of the impurity.


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