Highly activated shallow Ga profiles in silicon obtained by implantation and rapid thermal annealing

Harrison, H. B.; Iyer, S. S.; Sai-Halasz, G. A.; Cohen, S. A.
September 1987
Applied Physics Letters;9/28/1987, Vol. 51 Issue 13, p992
Academic Journal
The physical and electrical characteristics of gallium (Ga) ion implanted <100> silicon, annealed for times of the order of seconds to several tens of seconds for temperatures in the range of 550–900 °C, are presented. It is shown that for the chosen doses of 1–6×1015/cm2 and energy of 100 keV highly electrically active p-type layers (approaching 100%) can be achieved. The highest activation being reached at temperatures below ∼650 °C with no profile distortion. For temperatures in excess of 800 °C this electrical activation decreases and significant profile movement occurs even for times as short as 2 s.


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