TITLE

Er-doped InP and GaAs grown by metalorganic chemical vapor deposition

AUTHOR(S)
Uwai, Kunihiko; Nakagome, Hiroshi; Takahei, Kenichiro
PUB. DATE
September 1987
SOURCE
Applied Physics Letters;9/28/1987, Vol. 51 Issue 13, p1010
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Erbium is doped into InP and GaAs epitaxial layers for the first time by metalorganic chemical vapor deposition using tris-cyclopentadienyl erbium [Er(C5H5)3]. Uniform doping as high as 1.5×1019 cm-3 across the entire depth of the epitaxial layers is revealed by secondary ion mass spectroscopy. Erbium-related photoluminescence spectra around 1.54 μm from InP:Er and GaAs:Er show remarkable resemblance. At 2 K, in addition to the dominant zero phonon line at 1542 nm for InP:Er and at 1543 nm for GaAs:Er, several other zero phonon lines are observed at longer wavelengths. The Er-related peak is observed at 1539±1 nm even at 300 K for InP:Er, shifting toward the shorter wavelengths by a little as 3 nm with increasing temperature from 2 to 300 K.
ACCESSION #
9824288

 

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