TITLE

Elucidation of the organometallic vapor phase epitaxial growth mechanism for InP

AUTHOR(S)
Buchan, N. I.; Larsen, C. A.; Stringfellow, G. B.
PUB. DATE
September 1987
SOURCE
Applied Physics Letters;9/28/1987, Vol. 51 Issue 13, p1024
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Organometallic vapor phase epitaxy has achieved remarkable recent success, becoming the most promising technique for the ultimate production of III/V materials and device structures. Unfortunately, our understanding of the growth process remains primitive. In this letter we report a new technique for tracing the reactions by conducting the epitaxial growth in a D2 ambient using a time-of-flight mass spectrometer to analyze the product molecules. The pyrolysis reactions were studied for PH3, both alone and in the presence of trimethylindium (TMIn), and for TMIn alone and in the presence of PH3. For the reactants alone, the PH3 pyrolysis is completely heterogeneous at the InP surface, while TMIn pyrolyzes mostly homogeneously in the gas phase. For TMIn and PH3 together, the reaction mechanism is entirely different, and the pyrolysis temperatures for both PH3 and TMIn are lowered. Since the reaction produces only CH4 molecules, with a complete absence of CH3D at high ratios of PH3 to TMIn, we hypothesize that InP growth is initiated by the direct interaction of TMIn and PH3 in the vapor phase.
ACCESSION #
9824285

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics