Anomalous oxidation rate of silicon implanted with very high doses of arsenic

Choi, Seong S.; Numan, M. Z.; Chu, W. K.; Irene, E. A.
September 1987
Applied Physics Letters;9/28/1987, Vol. 51 Issue 13, p1001
Academic Journal
An anomalous increase in oxidation rate was observed during low-temperature thermal oxidation of very high dose (5×1016, 7×1016/cm2) As+ ion implanted silicon. Oxidation of Si at 850 °C was faster than that at 950 °C. This effect was attributed to the snowplowing of arsenic (which was more pronounced at lower temperatures) creating a glassy Si-O-As layer near the Si-SiO2 interface.


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