TITLE

GaAs-GaAlAs graded-index separate confinement heterostructure laser diodes selectively grown by molecular beam epitaxy on SiO2-masked substrates

AUTHOR(S)
Hong, J. M.; Wu, M. C.; Wang, S.; Wang, W. I.; Chang, L. L.
PUB. DATE
September 1987
SOURCE
Applied Physics Letters;9/21/1987, Vol. 51 Issue 12, p886
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The GaAs-GaAlAs graded-index separate confinement heterostructure was grown selectively by molecular beam epitaxy on a SiO2-masked GaAs (100) substrate. The stripe windows on the SiO2 mask were 10 μm in width and were oriented along [011] direction. The laser diodes thus fabricated lased in a single longitudinal mode with a side mode suppression ratio of 95:1. Both the longitudinal mode and the single-lobe far-field pattern were stable up to 4Ith.
ACCESSION #
9824276

 

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