TITLE

Structural and photoluminescent properties of GaInAs quantum wells with InP barriers grown by organometallic vapor phase epitaxy

AUTHOR(S)
Carey, K. W.; Hull, R.; Fouquet, J. E.; Kellert, F. G.; Trott, G. R.
PUB. DATE
September 1987
SOURCE
Applied Physics Letters;9/21/1987, Vol. 51 Issue 12, p910
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Ga0.47In.53As/InP quantum well structures grown by atmospheric pressure organometallic vapor phase epitaxy are characterized by high-resolution transmission electron microscopy (HRTEM) and 4 K photoluminescence (PL). Microdensitometer analysis of the HRTEM images shows GaInAs wells as narrow as 10 Å with slightly asymmetric interface widths. The InP to GaInAs transitions occur within 200 monolayers while the GaInAs to InP transitions are 3–5 monolayers wide, probably due to As carryover. 4 K PL shows half-widths below 9 meV for quantization shifts up to 140 meV. PL peak shifts as large as 395 meV for the narrowest quantum wells are observed compared to bulk Ga0.47In0.53As.
ACCESSION #
9824267

 

Related Articles

  • Chemical beam epitaxial growth of very low threshold Ga0.47In0.53As/InP double-heterostructure and multiquantum well lasers. Tsang, W. T. // Applied Physics Letters;10/20/1986, Vol. 49 Issue 16, p1010 

    We report the successful preparation by chemical beam epitaxy and performance characteristics of Ga0.47In0.53As/InP double-heterostructure (DH) and multiquantum well (MQW) lasers emitting at 1.47–1.72 μm. The very low threshold current densities Jth of 1.3 kA/cm2 and 1.5 kA/cm2...

  • Extremely wide modulation bandwidth in a low threshold current strained quantum well laser. Suemune, I.; Coldren, L. A.; Yamanishi, M.; Kan, Y. // Applied Physics Letters;10/10/1988, Vol. 53 Issue 15, p1378 

    Lasing characteristics of strained quantum well (QW) structures such as InGaAs/AlGaAs on GaAs and InGaAs/InAlAs on InP were analyzed by taking into account the band mixing effect in the valence band. A relaxation oscillation frequency fr, which gives a measure of the upper modulation frequency...

  • Critical layer thickness in strained Ga1-xInxAs/InP quantum wells. Temkin, H.; Gershoni, D. G.; Chu, S. N. G.; Vandenberg, J. M.; Hamm, R. A.; Panish, M. B. // Applied Physics Letters;10/16/1989, Vol. 55 Issue 16, p1668 

    We use a combination of electrical, optical, and structural characterization techniques to determine the critical layer thickness of strained Ga1-xInxAs/InP quantum wells. Well compositions covering the entire range of strain available, from -3.8% (GaAs) to +3.2% (InAs), were investigated. We...

  • Magnetophotoluminescence study of GaxIn1-xP quantum wells with CuPt-type long-range ordering. Shao, Jun; Lü, Xiang; Yue, Fangyu; Huang, Wei; Guo, Shaoling; Chu, Junhao // Journal of Applied Physics;9/1/2006, Vol. 100 Issue 5, p053522 

    Magnetophotoluminescence (PL) measurements are performed on GaxIn1-xP/AlGaInP quantum wells with CuPt-type long-range ordering. Curve-fitting and second-order derivative operations are conducted, respectively, on the PL spectra, and two different PL components are identified with an energetic...

  • Optical properties of very thin GaInAs(P)/InP quantum wells grown by gas source molecular beam epitaxy. Panish, M. B.; Temkin, H.; Hamm, R. A.; Chu, S. N. G. // Applied Physics Letters;7/21/1986, Vol. 49 Issue 3, p164 

    Single quantum wells of GaInAs and GaInAsP isolated by 150-Ã…-thick InP barriers have been grown by gas source molecular beam epitaxy. The quantum wells ranged in thickness from 5 to 30 Ã…. Photoluminescence and transmission electron microscopy were used to characterize them. Intense...

  • Magnetophotoluminescence study of GaxIn1-xP quantum wells with CuPt-type long-range ordering. Shao, Jun; Lü, Xiang; Yue, Fangyu; Huang, Wei; Guo, Shaoling; Chu, Junhao // Journal of Applied Physics;9/1/2006, Vol. 100 Issue 5, p053522 

    Magnetophotoluminescence (PL) measurements are performed on GaxIn1-xP/AlGaInP quantum wells with CuPt-type long-range ordering. Curve-fitting and second-order derivative operations are conducted, respectively, on the PL spectra, and two different PL components are identified with an energetic...

  • Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents. Sun, H. D.; Clark, A. H.; Calvez, S.; Dawson, M. D.; Shih, D. K.; Lin, H. H. // Applied Physics Letters;8/22/2005, Vol. 87 Issue 8, p081908 

    We report the temperature-dependent photoluminescence characterization of InNxAs1-x/In0.53Ga0.47As/InP multiple quantum wells with various N contents emitting in the midinfrared wavelength range. The emission wavelength in this material system can be tuned by the N content, but the bowing effect...

  • Single-monolayer quantum wells of GaInAs in InP grown by metalorganic vapor phase epitaxy. Seifert, W.; Fornell, J.-O.; Ledebo, L.; Pistol, M.-E.; Samuelson, L. // Applied Physics Letters;3/19/1990, Vol. 56 Issue 12, p1128 

    GaInAs/InP quantum wells differing in thickness between 1 and 20 monolayers (1 monolayer≊2.93 Å) have been grown by low-pressure (50 mbar) metalorganic vapor phase epitaxy and investigated by 2 K photoluminescence. To our knowledge this is the first observation of the one monolayer...

  • Hole transport over heterobarriers in InP based multiple quantum well structures. Knorr, C.; Riedl, T.; Geiger, M.; Scholz, F.; Hangleiter, A. // Applied Physics Letters;3/16/1998, Vol. 72 Issue 11 

    We present a systematic analysis of the hole transport over heterobarriers in the InGaAs(P)/InP material system. The experiments have been performed on our recently developed all-optical switching structures [C. Knorr et al., Appl. Phys. Lett. 69, 4212 (1996)], which offer an elegant access to...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics