TITLE

Rapid thermal annealing of Si-implanted GaAs with trimethylarsenic overpressure

AUTHOR(S)
Reynolds, S.; Vook, D. W.; Opyd, W. G.; Gibbons, J. F.
PUB. DATE
September 1987
SOURCE
Applied Physics Letters;9/21/1987, Vol. 51 Issue 12, p916
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have developed a novel rapid thermal processor to perform annealing of ion-implanted GaAs in a trimethylarsenic overpressure. This has allowed study of arsenic ambient annealing in a time/temperature regime not accessible with an arsine furnace. We have compared Si implant activation efficiency and surface degradation for arsenic ambient and proximity capped anneals. The arsenic ambient gives consistently higher activation efficiency with better surfaces.
ACCESSION #
9824263

 

Related Articles

  • Effect of post-growth annealing on patterned GaAs on silicon. Matyi, R. J.; Duncan, W. M.; Shichijo, H.; Tsai, H. L. // Applied Physics Letters;12/26/1988, Vol. 53 Issue 26, p2611 

    We have investigated the effect of post-growth thermal annealing on the defect surface of patterned GaAs on silicon. Significant improvements in defect structure of the patterned GaAs were observed by transmission electron microscopy (TEM) after short anneal times (15 min) at temperatures as low...

  • The impact of various annealing methods on silicon implant activation properties for GaAs crystals. Gray, M. L.; Parsey, J. M. // Journal of Applied Physics;7/1/1989, Vol. 66 Issue 1, p137 

    Presents a study that reported the impact of annealing on the activation of silicon ion implanted into bulk gallium arsenide (GaAs). Function of ion implantation of silicon; Activation properties for implanted GaAs wafers subjected to furnace or rapid thermal annealing cycles; Factors that...

  • Annealing behavior of implanted Si in semi-insulating GaAs in the presence of stress. Otsuki, T. // Journal of Applied Physics;2/1/1987, Vol. 61 Issue 3, p928 

    Presents a thermodynamic theory of the annealing behavior of silicon impurities in gallium arsenide. Ratio of the number of silicon impurities at the gallium sites to that at the arsenic sites in gallium arsenide; Effect of stresses on the behavior of silicon impurities; Experimental findings...

  • Annealing of Si-implanted GaAs studied using variable-energy positrons. Simpson, P. J.; Schultz, P. J.; Lee, S.-Tong; Chen, Samuel; Braunstein, G. // Journal of Applied Physics;9/1/1992, Vol. 72 Issue 5, p1799 

    Studies annealing of silicon-implanted gallium arsenide (GaAs) using variable-energy positrons. Characteristics of defect generation and annealing in ion-implanted GaAs; Dependence of the threshold fluence at which voids are formed and detected; Depth profile of the defects.

  • Sequential nature of damage annealing and activation in implanted GaAs. Tandon, J. L.; Madok, J. H.; Leybovich, I. S.; Bai, G.; Nicolet, M-A. // Applied Physics Letters;1/30/1989, Vol. 54 Issue 5, p448 

    Rapid thermal processing of implanted GaAs reveals a definitive sequence in the damage annealing and the electrical activation of ions. Removal of implantation-induced damage and restoration of GaAs crystallinity occurs first. Irrespective of implanted species, at this stage the GaAs is n-type...

  • Reduction of recombination centers in C-doped p[sup +]-GaAs/n-AlGaAs... Watanabe, Kazuo; Yamazaki, Hajime; Yamada, Kohji // Applied Physics Letters;3/4/1991, Vol. 58 Issue 9, p934 

    Investigates the effect of post-growth annealing at 500, 600, and 700 degrees Celsius on the electrical characteristics of C-doped p[sup +]-GaAs/n-AlGaAs junction diodes fabricated with metalorganic chemical deposition layers. Reduction of recombination current; Lack of degradation of carrier...

  • Lattice parameter changes and point defect reactions in low temperature electron irradiated AlAs. Gaber, A.; Zillgen, H.; Ehrhart, P.; Partyka, P.; Averback, R. S. // Journal of Applied Physics;12/1/1997, Vol. 82 Issue 11, p5348 

    Investigates damage accumulation and the subsequent thermally activated annealing reactions in AlAs layers on GaAs substrates using x-ray diffraction. Irradiation-induced increase of the lattice parameter; Analysis of the annealing step near room temperature; Resistance of AlAs against...

  • Optical study of surface dimers on sulfur-passivated (001) GaAs. Berkovitz, V.L.; Paget, D. // Applied Physics Letters;10/12/1992, Vol. 61 Issue 15, p1835 

    Examines the surface dimers on sulfur-passivated gallium arsenide through reflectance anisotropy. Modification of surface dimers; Desorption of sulfur during the annealing process; Formation of stable surface structures with reduced band bending.

  • Size stabilization of arsenic precipitates in nonstoichiometric GaAs-based compounds. Hung, C.-Y.; Harris, J. S. // Applied Physics Letters;8/16/1999, Vol. 75 Issue 7, p917 

    Investigates a narrowing of the size distribution of arsenic precipitates in nonstoichiometric gallium arsenide (GaAs)-based compounds during annealing for precipitates in the small size regime of a few nanometers. Improvement in size uniformity; Inverse coarsening caused by an elastic...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics