Rapid thermal annealing of Si-implanted GaAs with trimethylarsenic overpressure

Reynolds, S.; Vook, D. W.; Opyd, W. G.; Gibbons, J. F.
September 1987
Applied Physics Letters;9/21/1987, Vol. 51 Issue 12, p916
Academic Journal
We have developed a novel rapid thermal processor to perform annealing of ion-implanted GaAs in a trimethylarsenic overpressure. This has allowed study of arsenic ambient annealing in a time/temperature regime not accessible with an arsine furnace. We have compared Si implant activation efficiency and surface degradation for arsenic ambient and proximity capped anneals. The arsenic ambient gives consistently higher activation efficiency with better surfaces.


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