TITLE

Study of thermally oxidized yttrium films on silicon

AUTHOR(S)
Gurvitch, M.; Manchanda, L.; Gibson, J. M.
PUB. DATE
September 1987
SOURCE
Applied Physics Letters;9/21/1987, Vol. 51 Issue 12, p919
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Electrical and structural characteristics of thin thermally oxidized yttrium layers on Si and on Si covered with 40 Å of SiO2 have been investigated. The factor of ∼ four advantage in the dielectric constant of Y2O3 over SiO2, coupled with extremely low leakage current density of better than 10-10 A/cm2 in a field of 1.9 MV/cm, sufficiently high breakdown strength, and well-behaved capacitance-voltage characteristics makes Y2O3 a viable candidate for Si very large scale integration applications, at least in passive devices. High-resolution transmission electron microscopy reveals the structure of the composite dielectric and provides good agreement between calculated and experimental capacitance.
ACCESSION #
9824261

 

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