Growth of CdZnTe on Si by low-pressure chemical vapor deposition

Goela, Jitendra S.; Taylor, Raymond L.
September 1987
Applied Physics Letters;9/21/1987, Vol. 51 Issue 12, p928
Academic Journal
Epitaxial layers of Cd1-xZnxTe (0.04≤x≤0.62) have been grown on (100) and (111) silicon substrates by a low-pressure chemical vapor deposition (LPCVD) process. Elemental metals were used as sources of cadmium and zinc and dimethyltelluride was used as a source of tellurium. The characterization of layers by x-ray diffraction, scanning electron microscope, and scanning electron microscope x-ray dispersive analysis shows that hot wall LPCVD is a viable technique to grow large-area epitaxial layers of CdZnTe on different substrates.


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